DCR1021SF
DCR1021SF
Phase Control Thyristor
Target Information
DS5436-1.0 March 2001
FEATURES
s
s
s
Double Side Cooling
High Surge Capability
Low Inductance Internal Construction
KEY PARAMETERS
V
DRM
(max)
I
T(AV)
(max)
I
TSM
dV/dt
dI/dt
6500V
840A
14000A
1000V/
µ
s
100A/
µ
s
APPLICATIONS
s
s
s
High Power Converters
DC Motor Control
High Voltage Power Supplies
VOLTAGE RATINGS
Part and Ordering
Number
Repetitive Peak
Voltages
V
DRM
and V
DRM
V
6500
6400
6300
6200
6100
6000
Conditions
DCR1021SF65
DCR0121SF64
DCR1021SF63
DCR1021SF62
DCR1021SF61
DCR1021SF60
T
vj
= 0˚ to 125˚C,
I
DRM
= I
RRM
= 150mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Outline type code:
F
(See Package Details for further information)
Fig. 1 Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1021SF63
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
1/11
www.dynexsemi.com
DCR1021SF
CURRENT RATINGS
T
case
= 60˚C unless stated otherwise.
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
840
1320
1230
A
A
A
Parameter
Test Conditions
Max.
Units
Single Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
610
960
845
A
A
A
T
case
= 80˚C unless stated otherwise.
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
670
1050
960
A
A
A
Parameter
Test Conditions
Max.
Units
Single Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
480
750
650
A
A
A
2/11
www.dynexsemi.com
DCR1021SF
SURGE RATINGS
Symbol
I
TSM
I
2
t
I
TSM
I
2
t
Parameter
Surge (non-repetitive) on-state current
I
2
t for fusing
Surge (non-repetitive) on-state current
I
2
t for fusing
Test Conditions
10ms half sine, T
case
= 125˚C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine, T
case
= 125˚C
V
R
= 0
Max.
11.0
0.6 x 10
6
14.0
0.98 x 10
6
Units
kA
A
2
s
kA
A
2
s
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance - junction to case
Test Conditions
Double side cooled
Single side cooled
DC
Anode DC
Cathode DC
R
th(c-h)
Thermal resistance - case to heatsink
Clamping force 19.5kN
Double side
Min.
-
-
-
-
-
-
-
–55
18.0
Max.
0.022
0.38
0.52
0.004
0.008
135
125
125
22.0
Units
˚CW
˚CW
˚CW
˚CW
˚CW
˚C
˚C
˚C
kN
(with mounting compound) Single side
T
vj
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
T
stg
F
m
Storage temperature range
Clamping force
3/11
www.dynexsemi.com
DCR1021SF
SURGE RATINGS
Symbol
I
RRM
/I
RRM
dV/dt
dI/dt
Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Test Conditions
At V
RRM
/V
DRM
, T
case
= 125˚C
To 67% V
DRM
, T
j
= 125˚C
From 67% V
DRM
,
Repetitive 50Hz
Min.
-
-
-
-
Max.
150
1000
30
100
Units
mA
V/µs
A/µs
A/µs
Gate source 30V, 15Ω, Non-repetitive
t
r
≤
0.5µs, T
j
= 125˚C
V
T(TO)
r
T
t
gd
Threshold voltage
On-state slope resistance
Delay time
At T
vj
= 125˚C
At T
vj
= 125˚C
V
D
= 67% V
DRM
, gate source 30V, 15Ω
t
r
= 0.5µs, Tj = 25˚C
t
q
Turn-off time
I
T
= 1000A, t
p
= 1ms, T
j
=125˚C,
V
R
= 100V, dI
RR
/dt = 10A/µs,
V
DR
= 67% V
DRM
,
dV
DR
/dt = 20V/µs linear
I
L
I
H
Latching current
Holding current
T
j
= 25˚C, V
D
= 10V
T
j
= 25˚C, V
G–K
=
∞
-
-
0.5
1.2
0.98
1.5
V
mΩ
µs
1500
-
µs
-
-
600
200
mA
mA
4/11
www.dynexsemi.com
DCR1021SF
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 7
-
Max.
3
300
0.25
30
0.25
5
10
150
5
Units
V
mA
V
V
V
V
A
W
W
3000
T
j
= 125˚C
Instantaneous on-state current, I
T
- (A)
2500
2000
1500
1000
500
0
1
1.5
2
2.5
3
3.5
Instantaneous on-state voltage, V
T
- (V)
4
Fig.2 Maximum (limit) on-state characteristics
5/11
www.dynexsemi.com