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5SNA0600G650100

Description
Insulated Gate Bipolar Transistor, 600A I(C), 6500V V(BR)CES, N-Channel, HIPAK-9
CategoryDiscrete semiconductor    The transistor   
File Size480KB,9 Pages
ManufacturerABB
Websitehttp://www.abb.com/
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5SNA0600G650100 Overview

Insulated Gate Bipolar Transistor, 600A I(C), 6500V V(BR)CES, N-Channel, HIPAK-9

5SNA0600G650100 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-XUFM-X9
Contacts9
Reach Compliance Codecompliant
Shell connectionISOLATED
Maximum collector current (IC)600 A
Collector-emitter maximum voltage6500 V
ConfigurationCOMPLEX
JESD-30 codeR-XUFM-X9
Number of components3
Number of terminals9
Maximum operating temperature125 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
Nominal off time (toff)2820 ns
Nominal on time (ton)810 ns
Base Number Matches1
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