2.5A, 30V, 0.132ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Objectid | 1438414668 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 30 V |
| Maximum drain current (ID) | 2.5 A |
| Maximum drain-source on-resistance | 0.132 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | MS-012AA |
| JESD-30 code | R-PDSO-G8 |
| Number of components | 2 |
| Number of terminals | 8 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL AND P-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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