Power Field-Effect Transistor,
| Parameter Name | Attribute value |
| Objectid | 145054368029 |
| package instruction | , |
| Reach Compliance Code | compliant |
| Country Of Origin | USA |
| ECCN code | EAR99 |
| YTEOL | 6.8 |
| Other features | AVALANCHE RATED, HIGH RELIABILITY |
| Avalanche Energy Efficiency Rating (Eas) | 1100 mJ |
| Shell connection | ISOLATED |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 700 V |
| Maximum drain current (ID) | 32 A |
| Maximum drain-source on-resistance | 0.094 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 15 pF |
| JESD-30 code | R-MDFM-F12 |
| Number of components | 2 |
| Number of terminals | 12 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -55 °C |
| Package body material | METAL |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 208 W |
| Maximum pulsed drain current (IDM) | 100 A |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 300 ns |
| Maximum opening time (tons) | 100 ns |
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