REV LTR
DESCRIPTION
DATE
APPVD.
A
Revised Scope. Updated frequency range. Revised
paragraphs related to Hybrid Elements. Changed
frequency Vs. supply voltage specification.
Updated per ECN 2012-5
Updated per ECN 2012-22
10/21/10
MLG
B
C
12/15/11
8/15/12
MLG
MLG
XSIS XE63S - A00, SERIES
HC/ACMOS OSCILLATORS
FOR SPACE APPLICATIONS
400 KHz to 90 MHz
( 9 x 14 mm SMD, 5.0V )
REV STATUS
OF SHEETS
APPROVALS
PREP.
S. Gupta
ENG.
M. Gupta
Q. A.
M. Gupta
CUST.
ENG.
CUST
Q A.
REV
SHEET NO.
1
DATE
8/10/10
8/10/10
8/10/10
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5
6
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9 10 11 12 13 14 15 16
XSIS ELECTRONICS, INC.
12620 W. 63
rd
Street, Shawnee, KS 66216 USA
XE63S - A00 SERIES HC/ACMOS
“S” LEVEL OSCILLATORS
FSC NO.
57051
SCALE
N/A
SHEET
DWG. NO.
XE63S-A00
1 OF 6
1.
SCOPE: XE63S-A00, HC/ACMOS series, high reliability hybrid microcircuit crystal oscillators are
specifically designed, produced and tested by Xsis Electronics, Inc. for use in space applications.
These devices are of hybrid microcircuit technology conforming to MIL-PRF-55310, Type 1, Class 2
oscillators
APPLICABLE DOCUMENTS:
MIL-PRF-55310E
MIL-PRF-38534H
MIL-STD-883H
Oscillator, Crystal Controlled, General Specifications for
Hybrid Microcircuits, General Specifications for
Test Methods and Procedures for Microelectronics
2.
3.
3.1
3.2
REQUIREMENTS:
General: The individual item requirements shall be as specified herein.
Package: Ceramic, 90% Min. AL
2
O
3.
Thermal Resistance,
½
JC
: 50 C / Watt.
O
3.2.1 Lead finish: 50 to 70 micro-inches gold over 100 to 250 micro-inches nickel. Hot Solder tinning with
Sn60/Pb40 solder per MIL-PRF-55310 is optional at an additional cost.
3.2.2 Weight:
0.8 Gms typical, 1.0 Gms Max.
O
3.2.3 Reflow Soldering: Reflow soldering at 260 C for 10 seconds shall not degrade the performance.
3.3
Hermeticity: Resistance welded, hermetically sealed, leak rate of 1x (10)-8 atm-cc/s Max.
3.4
Marking: As a minimum, the parts shall be marked with Xsis P/N, Xsis cage code, ESD symbol,
date code and serial number.
3.5
Absolute Maximum Ratings: Unless otherwise specified, absolute maximum ratings shall be as
follows:
Supply Voltage
-0.5 to +7 VDC
o
o
Operating Free-Air Temperature Range
-55 C to +125 C
o
o
Storage Temperature
-55 C to +125 C
3.6
Electrical Characteristics: See Table I
3.6.1 Total Dose Radiation: Hybrid Microcircuit Crystal Oscillators shall be capable of meeting the
electrical characteristics of Para. 3.6 after being exposed to total ionizing dose radiation of
100 krads as per MIL-STD-883, method 1019.
3.7
Hybrid Elements:
3.7.1 Quartz Crystals: High grade cultured quartz crystals shall be used. As an option, Xsis will use
premium Q swept quartz crystals at an additional charge. Crystal element evaluation shall be in
accordance with MIL-PRF-55310.
3.7.2 Passive Elements: Established Reliability (ER) QPL components, failure level R minimum shall
be used or element lot evaluation shall be in accordance with MIL-PRF-55310, class S.
XSIS ELECTRONICS, INC.
12620 W. 63
rd
FSC NO.
DWG. NO.
REV
C
St., Shawnee, KS 66216 USA
57051
SCALE
N/A
XE63S-A00
SHEET
2 OF 6
3.7.3
Microcircuit die shall be from lots that have passed the element evaluation per MIL-PRF-55310,
Appendix B, Level S, except testing per Subgroup 5 is omitted. Subgroup 5 testing is circuit
configuration dependent, therefore, it is more effectively performed at the oscillator level as
explained in Paragraph 3.7.4 herein.
3.7.4 Microcircuit die used in the oscillator shall be from NSC/FC 54ACT family and must be from
wafer lot that has been successfully tested in the oscillator proposed herein for ionizing radiation
of up to 100 krads.
3.7.5 Lot Traceability: Production lot for these oscillators shall be homogenous. Each element used in
the production lot shall be traceable to a single lot. Swept quartz shall be traceable to the quartz
bar, and its applicable processing details.
4.
Quality Assurance Provisions: The quality assurance provisions shall be per MIL-PRF-55310,
except as specified herein.
100% Screening: The 100% screening shall be performed as per Table II. PDA requirements for
nondestructive bond pull and burn-in shall be as specified below.
PDA for Nondestruct Bond Pull: Unless otherwise specified, PDA shall be 2% of total number of
wires or 1 wire whichever is greater.
PDA for Burn-in: Unless otherwise specified, PDA for burn-in shall be 2% or 1 oscillator whichever
o
o
is greater and shall be applicable to +23 C and/or +25 C static tests only. In addition Delta
Calculation shall be performed after Burn-in and shall count for PDA. All measured values for
Delta Calculation shall be recorded. Parts that exceed the specified delta limits shall be rejected and
be counted for PDA. Delta Calculation shall be performed at 5.0 VDC for the following parameters:
Input Current
Output High Level
Output Low Level
10% change Maximum
10% change Maximum
0.1V change Maximum
4.1
4.2
4.3
4.4
4.5
4.6
Group A inspection shall be in accordance with MIL-PRF-55310 for product level S.
Group B inspection shall be in accordance with MIL-PRF-55310 for product level S.
Parts shall be capable of meeting group C inspection per MIL-PRF-55310. Generic group C
inspection data on similar parts may be used to satisfy this requirement.
Inspection and Test Data: Unless otherwise specified in the purchase order, the following
Inspection and test data documentation shall be supplied with the parts.
Certificate of Conformance
Summary of Class “S” screening Test Results
PDA Calculations for Non-Destruct Bond Pull and Burn-in
Summary of Elements Lot Traceability
Electrical Tests before and after Burn-in
Group A Inspection Summary
Group B (30 day Aging) Data
Radiographic Inspection Certificate
4.7
5.0
Preservation, Packaging and Packing: The oscillators shall be clean, dry and packaged in a
manner to provide adequate protection against electrostatic discharge, corrosion, deterioration
and physical damage during shipment.
FSC NO.
DWG. NO.
REV
C
XSIS ELECTRONICS, INC.
12620 W. 63
rd
St., Shawnee, KS 66216 USA
57051
SCALE
N/A
XE63S-A00
SHEET
3 OF 6
6.0 Part Numbering Example:
XE63S - A
Flight Model #
(See Note Below)
- FREQUENCY
Add Suffix “ G ” if Enable/Disable is Required
Select Operating Temperature Range
1
2
3
4
5
6
=
=
=
=
=
=
0 C
o
-30 C
o
-55 C
o
-55 C
o
-40 C
o
-20 C
o
Select Frequency Stability
1
2
3
4
5
6
=
=
=
=
=
=
+ 0.1%
+ 0.05%
+ 100 PPM
+ 50 PPM
+ 20 PPM
+ 10 PPM
to
to
to
to
to
to
+70 C
o
+85 C
o
+125 C
o
+105 C
o
+95 C
o
+70 C
o
(Options 5 & 6 are not available for all Temperature Range Options)
Example: XE63S - A43 - 24.000 MHz = 24.000 MHz, Class “S” Oscillator, + 50 PPM Frequency Stability over an
o
o
operating temperature range of -55 C to +125 C.
NOTES: For
Engineering Model,
replace letter “S” in the part number with letter “E”. Engineering Models use the
same design and elements as Flight Models except are subjected to MIL-PRF-55310 class B screening.
For
Prototype Model,
replace letter “S” in the part number with letter “P”. Prototypes are form, fit and
function equivalent of Flight Models. Prototypes may use class B elements.
#4
#3
Pad #
Marking
1
2
3
Function
E/D (Optional)
GND
OUTPUT
V
DD
#1
.200 + .005
–
(5.08 + .13)
–
#2
4
.150
Max
(3.81)
.018 + .003
–
(.46 + .08)
–
.557 Max
( 14.1 )
.040
( 1.0 )
Typ.
.375 Max
( 9.53 )
Enable/Disable Input is on Pin 1.
A “Low” level at the input disables
the Outpu into high impedance
state.
4 Leads
.004 Max
(.10)
.300 + .006
–
(7.6 + .15)
–
Dimensions: Inches (mm)
.008
(.20 )
Figure 1 - Package Configuration & Pin Connections
FSC NO.
DWG. NO.
REV
C
XSIS ELECTRONICS, INC.
12620 W. 63
rd
St., Shawnee, KS 66216 USA
57051
SCALE
N/A
XE63S-A00
SHEET
4 OF 6
TABLE I – Electrical Characteristics
Parameter
Frequency Range
Frequency Accuracy at 23 C
Frequency Stability Vs Temperature
Operating Temperature Range
Input Voltage
Input Current at 5.0V ( no load )
400.00 KHz to
5.00 MHz
5 mA Max.
10 mA Max.
20 mA Max.
25 mA Max.
30 mA Max.
35 mA Max.
50 mA Max.
Square Wave, HC/ACMOS
55/45% Max.
10K || 15 pF
0.9 V
DD
Min.
0.1 V
DD
Max.
5 nS Max
4 nS Max.
3 nS Max.
10 mS Max.
0.3 pS rms typ.
( 10 KHz to 20 MHz Integrated )
+ 4 PPM Max. for 10% change in Voltage
3 PPM / Year Max.
5.01 MHz to 10.00 MHz
10.01 MHz to 20.00 MHz
20.01 MHz to 30.00 MHz
30.01 MHz to 40.00 MHz
40.01 MHz to 50.00 MHz
50.01 MHz to 90.00 MHz
Output Waveform
Output Duty Cycle
Output Load
High Output Level
Low Output Level
Rise & Fall Times
100.00 KHz to 25.00 MHz
25.01 MHz to 45.00 MHz
45.01 MHz to 90.00 MHz
Start-up Time
Phase Jitter
Frequency Stability Vs Supply Voltage
Frequency Aging @ 70 C
O
O
Spec. Limits
400 KHz to 90 MHz
+ 0.0015% ( 15 PPM )
See Options in Paragraph 6.0
See Options in Paragraph 6.0
+ 5 VDC + 10%
Contact Xsis Engineering for any other special requirements.
XSIS ELECTRONICS, INC.
12620 W. 63
rd
FSC NO.
DWG. NO.
REV
C
St., Shawnee, KS 66216 USA
57051
SCALE
N/A
XE63S-A00
SHEET
5 OF 6
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