61298L35Y datasheet, PDF - EEWORLD Datasheet

61298L35Y: DescriptionStandard SRAM, 64KX4, 35ns, CMOS, PDSO28, 0.300 INCH, SOJ-28; Categorystorage storage; File Size664KB，10 Pages; ManufacturerIDT (Integrated Device Technology)

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61298L35Y Overview

Standard SRAM, 64KX4, 35ns, CMOS, PDSO28, 0.300 INCH, SOJ-28

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1156988474
package instruction	0.300 INCH, SOJ-28
Reach Compliance Code	not_compliant
ECCN code	EAR99
YTEOL	0
Maximum access time	35 ns
I/O type	COMMON
JESD-30 code	R-PDSO-J28
JESD-609 code	e0
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	4
Humidity sensitivity level	3
Number of functions	1
Number of terminals	28
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64KX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ28,.34
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
Certification status	Not Qualified
Maximum standby current	0.0005 A
Minimum standby current	2 V
Maximum slew rate	0.13 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn85Pb15)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30

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