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2N1480

Description
Power Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size101KB,1 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

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2N1480 Overview

Power Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN

2N1480 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1869056812
package instructionTO-5, 3 PIN
Reach Compliance Codeunknown
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)5 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)1.5 MHz

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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