Standard SRAM, 64KX1, 70ns, CMOS, CDIP24,
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Objectid | 101183603 |
package instruction | DIP, DIP24,.6 |
Reach Compliance Code | unknown |
ECCN code | 3A001.A.2.C |
YTEOL | 0 |
Maximum access time | 70 ns |
I/O type | SEPARATE |
JESD-30 code | R-XDIP-T24 |
JESD-609 code | e0 |
memory density | 65536 bit |
Memory IC Type | STANDARD SRAM |
memory width | 1 |
Number of terminals | 24 |
word count | 65536 words |
character code | 64000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -55 °C |
organize | 64KX1 |
Output characteristics | 3-STATE |
Package body material | CERAMIC |
encapsulated code | DIP |
Encapsulate equivalent code | DIP24,.6 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
Certification status | Not Qualified |
Filter level | 38535V;38534K;883S |
Maximum standby current | 0.0015 A |
Minimum standby current | 2 V |
Maximum slew rate | 0.02 mA |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | MILITARY |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
total dose | 200k Rad(Si) V |