TC4420
TC4429
6A HIGH-SPEED MOSFET DRIVERS
FEATURES
s
s
s
s
s
s
s
s
s
s
s
s
Latch-Up Protected ............ Will Withstand >1.5A
Reverse Output Current
Logic Input Will Withstand Negative Swing Up
to 5V
ESD Protected ..................................................... 4kV
Matched Rise and Fall Times ...................... 25nsec
High Peak Output Current ......................... 6A Peak
Wide Operating Range .......................... 4.5V to 18V
High Capacitive Load Drive ...................... 10,000pF
Short Delay Time ................................. 55nsec Typ.
Logic High Input, Any Voltage ............. 2.4V to V
DD
Low Supply Current With Logic "1" Input ... 450
µ
A
Low Output Impedance .................................... 2.5
Ω
Output Voltage Swing to Within 25mV of Ground
or V
DD
GENERAL DESCRIPTION
The TC4420/4429 are 6A (peak), single output MOSFET
drivers. The TC4429 is an inverting driver (pin-compatible
with the TC429), while the TC4420 is a non-inverting driver.
These drivers are fabricated in CMOS for lower power, more
efficient operation versus bipolar drivers.
Both devices have TTL-compatible inputs, which can be
driven as high as V
DD
+ 0.3V or as low as – 5V without upset
or damage to the device. This eliminates the need for
external level shifting circuitry and its associated cost and
size. The output swing is rail-to-rail ensuring better drive
voltage margin, especially during power up/power down
sequencing. Propagational delay time is only 55nsec (typ.)
and the output rise and fall times are only 25nsec (typ.) into
2500pF across the usable power supply range.
Unlike other drivers, the TC4420/4429 are virtually
latch-up proof. They replace three or more discrete compo-
nents saving PCB area, parts and improving overall system
reliability.
APPLICATIONS
s
s
s
s
Switch-Mode Power Supplies
Motor Controls
Pulse Transformer Driver
Class D Switching Amplifiers
ORDERING INFORMATION
Part No.
Logic
Noninverting
Noninverting
Noninverting
Noninverting
Noninverting
Noninverting
Noninverting
Inverting
Inverting
Inverting
Inverting
Inverting
Inverting
Inverting
Package
Temperature
Range
PIN CONFIGURATIONS
TO-220-5
VDD
INPUT
1
2
3
4
8-Pin DIP
8
7
VDD
OUTPUT
OUTPUT
GND
VDD
INPUT
NC
GND
1
2
3
4
8-Pin SOIC
8
7
VDD
OUTPUT
OUTPUT
GND
TC4420
TC4429
Tab is
Connected
to VDD
INPUT
GND
VDD
GND
OUTPUT
NC
GND
TC4420
TC4429
6
5
TC4420
TC4429
6
5
TC4420CAT
TC4420COA
TC4420CPA
TC4420EOA
TC4420EPA
TC4420IJA
TC4420MJA
TC4429CAT
TC4429COA
TC4429CPA
TC4429EOA
TC4429EPA
TC4429IJA
TC4429MJA
5-Pin TO-220
0°C to +70°C
8-Pin SOIC
0°C to +70°C
8-Pin PDIP
0°C to +70°C
8-Pin SOIC
– 40°C to +85°C
8-Pin PDIP
– 40°C to +85°C
8-Pin CerDIP
–25°C to +85°C
8-Pin CerDIP – 55°C to +125°C
5-Pin TO-220
0°C to +70°C
8-Pin SOIC
0°C to +70°C
8-Pin PDIP
0°C to +70°C
8-Pin SOIC
– 40°C to +85°C
8-Pin PDIP
– 40°C to +85°C
8-Pin CerDIP – 25°C to +85°C
8-Pin CerDIP – 55°C to +125°C
NOTE:
Duplicate pins must
both
be connected for proper operation.
FUNCTIONAL BLOCK DIAGRAM
VDD
500
µA
TC4429
300 mV
OUTPUT
INPUT
4.7V
GND
EFFECTIVE
INPUT
C = 38 pF
TC4420
© 2001 Microchip Technology Inc.
DS21419A
TC4420/9-6 10/18/96
6A HIGH-SPEED MOSFET DRIVERS
TC4420
TC4429
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage ............................................... – 5V to > V
DD
Input Current (V
IN
> V
DD
) .........................................50mA
Power Dissipation, (T
A
≤
70°C)
PDIP ............................................................... 730mW
SOIC ............................................................... 470mW
CerDIP ............................................................800mW
5-Pin TO-220 ......................................................1.6W
Package Power Dissipation, T
C
≤
25°C
5-Pin TO-220 (With Heat Sink) ......................... 12.5W
Derating Factors (To Ambient)
PDIP ............................................................. 8mW/°C
SOIC ............................................................. 4mW/°C
CerDIP ....................................................... 6.4mW/°C
5-Pin TO-220 .............................................. 12mW/°C
Thermal Impedances (To Case)
5-Pin TO-220 R
θJ-C
......................................................
10°C/W
Storage Temperature Range ................ – 65°C to +150°C
Operating Temperature (Chip) .............................. +150°C
Operating Temperature Range (Ambient)
C Version ............................................... 0°C to +70°C
I Version ........................................... – 25°C to +85°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields.
Stresses above those listed under "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other conditions
above those indicated in the operation sections of the specifications is
not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS:
T
A
= +25°C with 4.5V
≤
V
DD
≤
18V, unless otherwise specified.
Symbol
Input
V
IH
V
IL
V
IN
(Max)
I
IN
Output
V
OH
V
OL
R
O
R
O
I
PK
I
REV
Parameter
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Voltage Range
Input Current
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Test Conditions
Min
2.4
—
–5
– 10
V
DD
– 0.025
—
—
—
—
1.5
Typ
1.8
1.3
—
—
—
—
2.1
1.5
6
—
Max
—
0.8
V
DD
+0.3
10
—
0.025
2.8
2.5
—
—
Unit
V
V
V
µA
V
V
Ω
Ω
A
A
0V
≤
V
IN
≤
V
DD
See Figure 1
See Figure 1
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
DD
= 18V (See Figure 5)
Duty Cycle
≤
2%
t
≤
300µsec
Figure 1, C
L
= 2500pF
Figure 1, C
L
= 2500pF
Figure 1
Figure 1
V
IN
= 3V
V
IN
= 0V
Switching Time
(Note 1)
t
R
Rise Time
t
F
Fall Time
t
D1
Delay Time
t
D2
Delay Time
Power Supply
I
S
V
DD
Power Supply Current
Operating Input Voltage
—
—
—
—
—
—
4.5
25
25
55
55
0.45
55
—
35
35
75
75
1.5
150
18
nsec
nsec
nsec
nsec
mA
µA
V
TC4420/9-6 10/18/96
2
© 2001 Microchip Technology Inc.
DS21419A
6A HIGH-SPEED MOSFET DRIVERS
TC4420
TC4429
ELECTRICAL CHARACTERISTICS:
Measured over operating temperature range with 4.5V
≤
V
DD
≤
18V,
unless otherwise specified.
Symbol
Input
V
IH
V
IL
V
IN
(Max)
I
IN
Output
V
OH
V
OL
R
O
R
O
Parameter
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Voltage Range
Input Current
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Test Conditions
Min
2.4
—
–5
– 10
V
DD
– 0.025
—
—
—
—
—
—
—
—
—
4.5
Typ
—
—
—
—
—
—
3
2.3
32
34
50
65
0.45
60
—
Max
—
0.8
V
DD
+ 0.3
10
—
0.025
5
5
60
60
100
100
3
400
18
Unit
V
V
V
µA
V
V
Ω
Ω
nsec
nsec
nsec
nsec
mA
µA
V
0V
≤
V
IN
≤
V
DD
See Figure 1
See Figure 1
I
OUT
= 10mA, V
DD
= 18V
I
OUT
= 10mA, V
DD
= 18V
Figure 1, C
L
= 2500pF
Figure 1, C
L
= 2500pF
Figure 1
Figure 1
V
IN
= 3V
V
IN
= 0V
Switching Time
(Note 1)
t
R
Rise Time
t
F
Fall Time
t
D1
Delay Time
t
D2
Delay Time
Power Supply
I
S
V
DD
Power Supply Current
Operating Input Voltage
NOTE:
1. Switching times guaranteed by design.
VDD = 18V
1µF
1
0.1µF
2
6
7
TC4429
4
5
CL = 2500pF
8
0.1µF
0V
INPUT
OUTPUT
+18V
OUTPUT
0V
10%
10%
+5V
INPUT
10%
tD1
90%
tF
tD2
90%
tR
90%
INPUT:
100 kHz, square wave,
t
RISE
= t
FALL
≤
10nsec.
Figure 1. Switching Time Test Circuit
© 2001 Microchip Technology Inc.
DS21419A
3
TC4420/9-6 10/18/96
6A HIGH-SPEED MOSFET DRIVERS
TC4420
TC4429
TYPICAL CHARACTERISTICS
Rise Time vs. Supply Voltage
120
100
80
60
100
Fall Time vs. Supply Voltage
Rise and Fall Times vs. Temperature
50
C
L
= 2200 pF
V
DD
= 18V
80
40
TIME (nsec)
C
L
= 10,000 pF
TIME (nsec)
TIME (nsec)
60
C
L
= 10,000 pF
30
t
FALL
t
RISE
C
L
= 4700 pF
40
40
C
L
= 4700 pF
C
L
= 2200 pF
20
C
L
= 2200 pF
20
0
20
10
5
7
9
11
13
15
0
5
7
V
DD
(V)
9
11
V
DD
(V)
13
15
0
–60
–20
20
60
TA (°C)
100
140
Rise Time vs. Capacitive Load
100
80
60
TIME (nsec)
Fall Time vs. Capacitive Load
100
80
Propagation Delay Time
vs. Supply Voltage
65
60
DELAY TIME (nsec)
60
TIME (nsec)
V
DD
= 5V
55
50
45
40
t
D2
40
40
V
DD
= 5V
V
DD
= 12V
V
DD
= 18V
V
DD
= 12V
V
DD
= 18V
20
20
t
D1
10
1000
CAPACITIVE LOAD (pF)
10,000
10
1000
CAPACITIVE LOAD (pF)
10,000
35
4
6
8
10
12 14 16
SUPPLY VOLTAGE (V)
18
Propagation Delay Time
vs. Temperature
50
C
L
= 2200 pF
V
DD
= 18V
Supply Current vs. Capacitive Load
84
V
DD
= 15V
SUPPLY CURRENT (mA)
SUPPLY CURRENT (mA)
Supply Current vs. Frequency
1000
C
L
= 2200 pF
40
70
56
42
18V
100
DELAY TIME (nsec)
t
D2
30
10V
5V
t
D1
20
500 kHz
28
10
10
200 kHz
14
20 kHz
0
–60
0
0
0
100
1000
CAPACITIVE LOAD (pF)
10,000
–20
20
60
TA (°C)
100
140
0
100
1000
FREQUENCY (kHz)
© 2001 Microchip Technology Inc.
10,000
TC4420/9-6 10/18/96
4
DS21419A
6A HIGH-SPEED MOSFET DRIVERS
TC4420
TC4429
TYPICAL CHARACTERISTICS
(Cont.)
High-State Output Resistance
5
2.5
Low-State Output Resistance
100 mA
4
R
OUT
(
Ω
)
R
OUT
(
Ω
)
2
10 mA
50 mA
100 mA
50 mA
1.5
3
10 mA
2
5
7
9
11
V
DD
(V)
13
15
1
5
7
9
11
V
DD
(V)
13
15
Effect of Input Amplitude
on Propagation Delay
200
LOAD = 2200 pF
-9
Total nA•S Crossover*
4
DELAY TIME (nsec)
160
Crossover Area (A•S) x 10
3
120
INPUT 2.4V
INPUT 3V
2
80
INPUT 5V
40
INPUT 8V AND 10V
1
0
5
6
7
8
9 10 11 12 13 14 15
V
DD
(V)
0
5
6
7 8 9 10 11 12 13 14 15
SUPPLY VOLTAGE (V)
*
The values on this graph represent
the loss seen by the driver during
one complete cycle. For a single
transition, divide the value by 2.
© 2001 Microchip Technology Inc.
DS21419A
5
TC4420/9-6 10/18/96
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