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D45H11

Description
complementary silicon power transistors
CategoryDiscrete semiconductor    The transistor   
File Size161KB,3 Pages
ManufacturerBOCA
Websitehttp://www.bocasemi.com/
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complementary silicon power transistors

D45H11 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)10 A
ConfigurationSingle
Minimum DC current gain (hFE)60
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)50 W
surface mountNO
Nominal transition frequency (fT)12 MHz
Base Number Matches1

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Description complementary silicon power transistors complementary silicon power transistors complementary silicon power transistors complementary silicon power transistors complementary silicon power transistors complementary silicon power transistors complementary silicon power transistors complementary silicon power transistors
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
Maximum collector current (IC) 10 A 10 A 10 A 10 A 10 A 10 A 10 A 10 A
Configuration Single Single Single Single Single Single Single Single
Minimum DC current gain (hFE) 60 60 60 60 35 35 35 35
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP NPN NPN NPN NPN NPN NPN PNP
Maximum power dissipation(Abs) 50 W 50 W 50 W 50 W 50 W 50 W 50 W 50 W
surface mount NO NO NO NO NO NO NO NO
Nominal transition frequency (fT) 12 MHz 15 MHz 15 MHz 15 MHz 15 MHz 15 MHz 15 MHz 12 MHz
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