SRAM Module, 512KX8, 85ns, CMOS, PDIP32
| Parameter Name | Attribute value |
| Objectid | 1125527573 |
| package instruction | DIP, DIP32,.6 |
| Reach Compliance Code | unknown |
| ECCN code | 3A991.B.2.A |
| Maximum access time | 85 ns |
| I/O type | COMMON |
| JESD-30 code | R-PDIP-T32 |
| memory density | 4194304 bit |
| Memory IC Type | SRAM MODULE |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 32 |
| word count | 524288 words |
| character code | 512000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 512KX8 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP32,.6 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Certification status | Not Qualified |
| Maximum standby current | 0.00018 A |
| Minimum standby current | 2 V |
| Maximum slew rate | 0.11 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| width | 15.24 mm |
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