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1N5312 LEAD

Description
Stabilizing diode 3.9ma curr reg
Categorysemiconductor    Discrete semiconductor   
File Size331KB,2 Pages
ManufacturerCentral Semiconductor
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1N5312 LEAD Overview

Stabilizing diode 3.9ma curr reg

1N5283 THRU 1N5314
SILICON CURRENT LIMITING DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N5283 series
types are silicon field effect current regulator diodes
designed for applications requiring a constant
current over a wide voltage range. These devices
are manufactured in the cost effective DO-35 double
plug case which provides many benefits to the
user, including space savings and improved thermal
characteristics. Special selections of IP (regulator
current) are available for critical applications.
DO-35 CASE
FEATURES:
• High Reliability
• Special Selections Available
• Superior Lot To Lot Consistency
• Surface Mount Devices Available
SYMBOL
POV
PD
TJ, Tstg
UNITS
V
mW
°C
MAXIMUM RATINGS:
(TL=75°C)
Peak Operating Voltage
Power Dissipation
Operating and Storage Junction Temperature
ELECTRICAL CHARACTERISTICS:
(TA=25°C)
Regulator
Current
(Note 1)
Type
MIN
mA
1N5283
1N5284
1N5285
1N5286
1N5287
1N5288
1N5289
1N5290
1N5291
1N5292
1N5293
1N5294
1N5295
1N5296
1N5297
1N5298
0.198
0.216
0.243
0.270
0.297
0.351
0.387
0.423
0.504
0.558
0.612
0.675
0.738
0.819
0.900
0.990
IP @ VT=25V
NOM
mA
0.22
0.24
0.27
0.30
0.33
0.39
0.43
0.47
0.56
0.62
0.68
0.75
0.82
0.91
1.00
1.10
MAX
mA
0.242
0.264
0.297
0.330
0.363
0.429
0.473
0.517
0.616
0.682
0.748
0.825
0.902
1.001
1.10
1.21
100
600
-65 to +200
Minimum
Dynamic
Impedance
ZT @ VT=25V
25
19
14
9.0
6.6
4.1
3.3
2.7
1.90
1.55
1.35
1.15
1.00
0.88
0.80
0.70
Minimum
Knee
Impedance
ZK @ VK=6.0V
2.75
2.35
1.95
1.60
1.35
1.00
0.87
0.75
0.56
0.47
0.40
0.335
0.29
0.24
0.205
0.18
Maximum
Limiting
Voltage
VL @ IL=0.8 x IP MIN
V
1.0
1.0
1.0
1.0
1.0
1.05
1.05
1.05
1.10
1.13
1.15
1.20
1.25
1.29
1.35
1.40
Notes: (1) Pulsed Method: Pulse Width (ms) = 27.5 divided by IP NOM (mA)
R3 (24-May 2010)

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