P1086
Vishay Siliconix
P-Channel JFET
PRODUCT SUMMARY
V
GS(off)
Max (V)
10
r
DS(on)
Max (W)
75
I
D(off)
Typ (pA)
–10
t
ON
Typ (ns)
25
FEATURES
D
D
D
D
D
Low On-Resistance—<75
W
Fast Switching—t
ON
: 25 ns
High Off-Isolation—I
D(off)
: –10 pA
Low Capacitance: 5 pF
Low Insertion Loss
BENEFITS
D
D
D
D
D
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response
Eliminates Additional Buffering
APPLICATIONS
D
D
D
D
D
Analog Switches
Choppers
Sample-and-Hold
Normally “On” Switches
Current Limiters
DESCRIPTION
The P1086 is a p-channel analog switch designed to provide
low on-resistance and fast switching. This device is optimized
for use in complementary switching applications with the
Vishay Siliconix J/SST111 series.
The P1086 device is available in various lead forms and
tape-and-reel for automated assembly (see Packaging
Information).
TO-226AA
(TO-92)
S
1
D
2
G
3
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Document Number: 70259
S-04030—Rev. E, 04-Jun-01
Lead Temperature (
1
/
16
” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipation
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
www.vishay.com
9-1
P1086
Vishay Siliconix
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
b
Gate Reverse Current
Gate Operating Current
V
(BR)GSS
V
GS(off)
I
DSS
I
GSS
I
G
I
G
= 1
mA
, V
DS
= 0 V
V
DS
= –15 V, I
D
= –1
mA
V
DS
= –20 V, V
GS
= 0 V
V
GS
= 15 V, V
DS
= 0 V
T
A
= 85_C
V
DG
= –15 V, I
D
= –1 mA
V
GS
= 12 V
Drain Cutoff Current
I
D(off)
V
DS
= –15 V
V
GS
= 7 V
T
A
= 85_C
Drain-Source On-Resistance
Gate-Source Forward Voltage
r
DS(on)
V
GS(F)
V
GS
= 0 V, I
D
= –1 mA
V
DS
= 0 V, I
G
= –1 mA
–0.7
–10
0.01
0.6
0.01
–0.01
–0.01
–0.001
–10
–0.5
75
mA
W
V
nA
2
30
45
V
10
mA
Symbol
Test Conditions
Min
Typ
a
Max
Unit
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Drain-Source On-Resistance
Common-Source Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
g
fs
g
os
r
ds(on)
C
iss
C
rss
e
n
V
DS
= –15 V, I
D
= –1 mA
f = 1 kHz
4.5
20
75
20
5
20
45
pF
V
DS
= 0 V, V
GS
= 10 V, f = 1 MHz
V
DG
= –10 V, I
D
= –1 mA
f = 1 kHz
10
nV⁄
√Hz
mS
mS
W
V
GS
= 0 V, I
D
= 0 mA , f = 1 kHz
V
DS
= –15 V, V
GS
= 0 V
f = 1 MHz
Switching
t
d(on)
Turn-On Time
t
r
t
d(off)
t
f
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW
v300
ms
duty cycle 3%.
V
GS(L)
= 0 V, V
GS(H)
= 10 V
See Switching Circuit
10
15
10
20
15
20
ns
15
50
PSCIA
Turn-Off Time
www.vishay.com
9-2
Document Number: 70259
S-04030—Rev. E, 04-Jun-01
P1086
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
200
r
DS(on)
– Drain-Source On-Resistance (
Ω )
I
DSS
160
r
DS
120
–60
–80
–100
g
fs
– Forward Transconductance (mS)
I
DSS
– Saturation Drain Current (mA)
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
18
g
fs
and g
os
@ V
DS
= –15 V
V
GS
= 0 V, f = 1 kHz
g os – Output Conductance (
m
S)
15
g
fs
12
g
os
150
200
250
80
–40
9
100
40
r
DS
@ I
D
= –1 mA, V
GS
= 0 V
I
DSS
@ V
DS
= –15 V, V
GS
= 0 V
–20
6
50
0
0
2
4
6
8
10
V
GS(off)
– Gate-Source Cutoff Voltage (V)
0
3
0
2
4
6
8
V
GS(off)
– Gate-Source Cutoff Voltage (V)
0
10
Output Characteristics
–25
V
GS(off)
= 3 V
I D – Drain Current (mA)
–20
0.5 V
–15
1.0 V
–10
1.5 V
–5
2.0 V
0
0
–4
–8
–12
–16
–20
V
GS
= 0 V
r
DS(on)
– Drain-Source On-Resistance (
Ω )
250
On-Resistance vs. Drain Current
T
A
= 25_C
200
V
GS(off)
= 1.5 V
150
3V
100
5V
50
0
–1
–10
I
D
– Drain Current (mA)
–100
V
DS
– Drain-Source Voltage (V)
Output Characteristics
–2
V
GS
= 0 V
I D – Drain Current (mA)
–1.6
0.5 V
1.0 V
–1.2
2.0 V
–0.8
1.5 V
r
DS(on)
– Drain-Source On-Resistance (
Ω )
300
On-Resistance vs. Temperature
I
D
= –1 mA
r
DS
changes X 0.7%/_C
240
180
V
GS(off)
= 1.5 V
3V
120
5V
–0.4
V
GS(off)
= 3 V
0
0
–0.1
–0.2
–0.3
–0.4
–0.5
60
0
–55
–35
–15
5
25
45
65
85
105
125
V
DS
– Drain-Source Voltage (V)
T
A
– Temperature (_C)
Document Number: 70259
S-04030—Rev. E, 04-Jun-01
www.vishay.com
9-3
P1086
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Turn-On Switching
50
t
r
approximately independent of I
D
V
DD
= –10 V, R
G
= 220
W
V
GS(H)
= 10 V, V
GS(L)
= 0 V
40
Switching Time (ns)
Switching Time (ns)
16
5V
30
t
ON
@ I
D
= –5 mA
t
ON
@ I
D
= –10 mA
12
t
d(off)
V
GS(off)
= 1.5 V
8
5V
4
t
r
@ I
D
= –5 mA
0
0
1
2
3
4
5
0
0
–3
–6
–9
–12
–15
V
DD
= –10 V, V
GS(H)
= 10 V, V
GS(L)
= 0 V
20
t
f
V
GS(off)
= 1.5 V
Turn-Off Switching
20
10
V
GS(off)
– Gate-Source Cutoff Voltage (V)
I
D
– Drain Current (mA)
Capacitance vs. Gate-Source Voltage
30
V
DS
= 0 V
f = 1 MHz
24
I G – Gate Leakage
Capacitance (pF)
100 nA
10 nA
Gate Leakage Current
–1 mA
T
A
= 125_C
I
D
=–10 mA
1 nA
18
C
iss
12
C
rss
6
100 pA
I
GSS
@ 125_C
–10 mA
10 pA
T
A
= 25_C
I
GSS
@ 25_C
–1 mA
1 pA
0
0
4
8
12
16
20
0.1 pA
0
–10
–20
–30
–40
–50
V
GS
– Gate-Source Voltage (V)
V
DG
– Drain-Gate Voltage (V)
Transfer Characteristics
–40
V
GS(off)
= 3 V
–32
I D – Drain Current (mA)
en – Noise Voltage nV /
Hz
V
DS
= –15 V
100
Noise Voltage vs. Frequency
I
D
= –0.1 mA
–24
T
A
= –55_C
25_C
10
–1 mA
–16
–8
125_C
0
0
1
2
3
4
5
V
DS
= –10 V
1
10
100
1k
f – Frequency (Hz)
Document Number: 70259
S-04030—Rev. E, 04-Jun-01
10 k
100 k
V
GS
– Gate-Source Voltage (V)
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9-4
P1086
Vishay Siliconix
SWITCHING TIME TEST CIRCUIT
V
DD
V
GG
R
L
*
R
G
*
I
D(on)
*Non-inductive
–6 V
12 V
1800
W
220
W
–3 mA
V
GS(L)
V
GS(H)
V
GG
V
DD
1.2 kW
R
L
0.1 mF
R
G
7.5 kW
Input Pulse
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Sampling Scope
Rise Time 0.4 ns
Input Resistance 10 M
W
Input Capacitance 1.5 pF
51
W
1.2 kW
Sampling
Scope
51
W
51
W
Document Number: 70259
S-04030—Rev. E, 04-Jun-01
www.vishay.com
9-5
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