MMIC Amplifiers
High Performance/Quality MMIC Based on InGaP HBT, pHEMT, and
Linear MESFET Technologies
High Linearity, Fully Matched WiMax Power Amplifiers
High Linearity, Broadband Gain Blocks
Military Screening Available on Hermetically Sealed Package
Products
Low Cost Commercial Products
MMIC AMPLIFIERS
2
Over
29 Years of Technical Expertise and Innovation
Space / Hi-Rel Products
MwT has been providing components and semiconductor devices to the space industry since 1985. MwT performs
assembly, testing, screening, and qualifications testing for microwave semiconductor devices, microwave components
and subsystems based on MIL-PRF-38534 and according to military and government Hi-Rel standards such as
MIL-PRF-38535, MIL-STD-202, MIL-STD-883, MIL-STD-750, MIL-STD-810, MIL-Q-9858, MIL-STD-19500 and MIL-I-45208.
Some of MwT’s space qualified products are highlighted in this section.
Equivalent screening to MIL-PRF-38534 class H and K, and NASA programs.
Space / Hi=Rel Products
Space Qualified Low Noise Amplifiers
Pkg/
Chip
H4
H4
H4
Model
LN-162315-H4
LN-141510-H4
GM-141526-H4
Freq
(GHz)
1.6-2.3
0.150
0.150
Linear
Gain
Typ/Min
(dB)
26
28
20
Gain
Flatness
Typ/MAX
(±dB)
0.3
1.0
1.0
Input
RL
Typ
(dB)
16
12
14
Output
RL
Typ
(dB)
16
10
14
NF
Typ
(dB)
1.5
1.0
5.0
Pout @
-1 dB
Typ
(dBm)
12
16
26
OIP3
Typ
(dBm)
-
26
37
Vdd
(V)
5
12
12
DC
Current
Typ/Max
(mA)
38
30
150
Space Qualified and Hi-Rel GaAs FETs
Gate
Width /
Length
(um)
630/0.3
630/0.3
300/0.3
250/0.3
250/0.3
250/0.3
2400/0.3
750/0.3
750/0.3
250/0.3
2400/0.8
Model
MwT-1
MwT-2
MwT-3
MwT-7
MwT-LP7
MwT-PH7
MwT-8
MwT-9
MwT-A9
MwT-PH7
MwT-H17
Pkg/
Avail.
70, 71
70, 71
70, 71
70
70
70, 71
71
70, 71
70, 71
70, 71
89, 71
Gate
Layout
Method
single stripe
single stripe
single stripe
single stripe
single stripe
single stripe
Interdigit
Interdigit
Interdigit
single stripe
Interdigit
Gate
Drain
Source
Bond
Qty
1, 1, 2
2, 2, 3
1, 1, 2
2, 2, 2
2, 2, 2
2, 1, 2
2, 2, 3
1, 1, 2
1, 1, 2
2, 1, 2
4, 4, 5
Chip
Thick-
ness &
VIA
(mil.)
5, no
5, no
5, no
5, no
5, no
4, no
4, no
5, no
5, no
4, no
5, no
S.S. Gain
@ 12 GHz
Typ/Min
(dB)
10.0 / 9.0
8.5 / 8.0
11.0 / 10.0
10.5 / 10.0
10.5 / 10.0
13.5 / 12.0
7.5 / 7.0
9.0 / 8.0
9.5 / 8.5
13.5 / 12.0
7.0 / 6.0
N.F. @
12 GHz
Typ/
Min
(dB)
2.0 / -
-/-
-/-
2.0 / -
2.0 / -
-/-
-/-
2.0 / -
1.8 / -
-/-
*
Ga @
N.F. @
12 GHz
Typ/Min
(dB)
7.0 / -
-/-
-/-
8.0 / -
8.0 / -
-/-
-/-
6.5 / 6.0
6.5 / 6.0
-/-
-/-
P-1dB @
12 GHz
Typ/Min
(dBm)
24.0/23.0
24.5/23.0
21.0/20.0
20.0/18.0
20.0/18.0
24.0/22.0
28.0/27.0
26.0/-
25.5/23.0
24.0/22.0
29.5/28.5
IP3 @
12 GHz
Typ/Min
(dBm)
-/-
-/-
-/-
-/-
-/-
-/-
-/-
-/-
-/-
-/-
45/-
Chip
Size
(um - um)
775 • 241
775 • 241
406 • 241
356 • 241
356 • 241
356 • 241
673 • 305
419 • 292
419 • 292
356 • 241
1130 • 279
Ideal
Circuit
FB Amp
BA Amp
BA Amp
BA/SE Amp
Oscillator
Medium pow
Power Amp
FB Amp
FB Amp
Medium pow
BA/FB Amp
Capabilities
Products Available for Space Screening
GaAs FETs
Microwave Bipolar Transistors
Microwave Diodes
Microwave Components such as hybrid amplifiers
Microwave Subsystems
Microwave Amplifiers
Screening
Element Evaluation, Group A, B, C, and D
Assembly and 100% Screening
Qualification Testing
Testing
DC and RF Parameters
Program Management
ISO Qualified Quality System
Over
29 Years of Technical Expertise and Innovation
5