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KM44V4004BS-8

Description
EDO DRAM, 4MX4, 80ns, CMOS, PDSO24, 0.300 INCH, TSOP2-24
Categorystorage    storage   
File Size50KB,1 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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KM44V4004BS-8 Overview

EDO DRAM, 4MX4, 80ns, CMOS, PDSO24, 0.300 INCH, TSOP2-24

KM44V4004BS-8 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP2
package instructionTSOP2, TSOP24/26,.36
Contacts24
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time80 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-G24
JESD-609 codee0
length17.14 mm
memory density16777216 bit
Memory IC TypeEDO DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals24
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP24/26,.36
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1.2 mm
self refreshNO
Maximum standby current0.0005 A
Maximum slew rate0.07 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm
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