K8S1015EZC-SE1DT datasheet, PDF

K8S1015EZC-SE1DT: DescriptionEEPROM Card, 32MX16, 95ns, Parallel, CMOS, PBGA64,; Categorystorage storage; File Size667KB，83 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K8S1015EZC-SE1DT Overview

EEPROM Card, 32MX16, 95ns, Parallel, CMOS, PBGA64,

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Objectid	1124627713
package instruction	FBGA, BGA64,10X14,20
Reach Compliance Code	compliant
ECCN code	3A991.B.1.B.1
YTEOL	0
Maximum access time	95 ns
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
JESD-30 code	R-PBGA-B64
JESD-609 code	e3
memory density	536870912 bit
Memory IC Type	EEPROM CARD
memory width	16
Humidity sensitivity level	1
Number of departments/size	512
Number of terminals	64
word count	33554432 words
character code	32000000
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	32MX16
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA64,10X14,20
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
Parallel/Serial	PARALLEL
Programming voltage	2.7 V
Certification status	Not Qualified
Department size	64K
Maximum standby current	0.00003 A
Maximum slew rate	0.07 mA
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	MATTE TIN
Terminal form	BALL
Terminal pitch	0.5 mm
Terminal location	BOTTOM
switch bit	YES
type	NOR TYPE

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