K8F1215EBM-FE1C datasheet, PDF

K8F1215EBM-FE1C: DescriptionFlash, 32MX16, 110ns, PBGA64; Categorystorage storage; File Size1MB，68 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K8F1215EBM-FE1C Overview

Flash, 32MX16, 110ns, PBGA64

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	107508590
package instruction	FBGA, BGA64,10X14,20
Reach Compliance Code	compliant
ECCN code	EAR99
YTEOL	0
Maximum access time	110 ns
startup block	BOTTOM
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
JESD-30 code	R-PBGA-B64
memory density	536870912 bit
Memory IC Type	FLASH
memory width	16
Number of departments/size	4,511
Number of terminals	64
word count	33554432 words
character code	32000000
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	32MX16
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA64,10X14,20
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
Parallel/Serial	PARALLEL
Certification status	Not Qualified
ready/busy	YES
Department size	16K,64K
Maximum standby current	0.00002 A
Maximum slew rate	0.055 mA
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.5 mm
Terminal location	BOTTOM
switch bit	YES
type	NOR TYPE

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