3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220
Parameter Name | Attribute value |
Maximum collector current | 3 A |
Maximum Collector-Emitter Voltage | 60 V |
Number of terminals | 3 |
Processing package description | TO-220, 3 PIN |
state | Contact Mf |
Shell connection | COLLECTOR |
structure | SINGLE |
Minimum DC amplification factor | 60 |
jedec_95_code | TO-220AB |
jesd_30_code | R-PSFM-T3 |
jesd_609_code | e0 |
moisture_sensitivity_level | NOT SPECIFIED |
Number of components | 1 |
Maximum operating temperature | 150 Cel |
Packaging Materials | PLASTIC/EPOXY |
packaging shape | RECTANGULAR |
Package Size | FLANGE MOUNT |
eak_reflow_temperature__cel_ | NOT SPECIFIED |
larity_channel_type | NPN |
wer_dissipation_max__abs_ | 30 W |
qualification_status | COMMERCIAL |
sub_category | Other Transistors |
surface mount | NO |
terminal coating | TIN LEAD |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
ime_peak_reflow_temperature_max__s_ | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Rated crossover frequency | 3 MHz |
CSD880GR | CSD880 | CSD880O | CSD880Y | |
---|---|---|---|---|
Description | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220 | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220 | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220 | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220 |
Maximum collector current | 3 A | 3 A | 3 A | 3 A |
Maximum Collector-Emitter Voltage | 60 V | 60 V | 60 V | 60 V |
Number of terminals | 3 | 3 | 3 | 3 |
Processing package description | TO-220, 3 PIN | TO-220, 3 PIN | TO-220, 3 PIN | TO-220, 3 PIN |
state | Contact Mf | Contact Mf | Contact Mf | Contact Mf |
Shell connection | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
structure | SINGLE | SINGLE | SINGLE | SINGLE |
Minimum DC amplification factor | 60 | 60 | 60 | 100 |
jedec_95_code | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
jesd_30_code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
jesd_609_code | e0 | e0 | e0 | e0 |
moisture_sensitivity_level | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Number of components | 1 | 1 | 1 | 1 |
Maximum operating temperature | 150 Cel | 150 Cel | 150 Cel | 150 Cel |
Packaging Materials | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
packaging shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package Size | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
eak_reflow_temperature__cel_ | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
larity_channel_type | NPN | NPN | NPN | NPN |
wer_dissipation_max__abs_ | 30 W | 30 W | 30 W | 30 W |
qualification_status | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
sub_category | Other Transistors | Other Transistors | Other Transistors | Other Transistors |
surface mount | NO | NO | NO | NO |
terminal coating | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
ime_peak_reflow_temperature_max__s_ | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON | SILICON |
Rated crossover frequency | 3 MHz | 3 MHz | 3 MHz | 3 MHz |