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K4M28323LH-FG7L

Description
Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90
Categorystorage    storage   
File Size143KB,12 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K4M28323LH-FG7L Overview

Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90

K4M28323LH-FG7L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid107069038
package instructionFBGA, BGA90,9X15,32
Reach Compliance Codeunknown
ECCN codeEAR99
YTEOL0
Maximum access time5.4 ns
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PBGA-B90
memory density134217728 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width32
Number of terminals90
word count4194304 words
character code4000000
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize4MX32
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA90,9X15,32
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
Certification statusNot Qualified
refresh cycle4096
Continuous burst length1,2,4,8,FP
Maximum standby current0.0005 A
Maximum slew rate0.12 mA
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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