Trans Voltage Suppressor Diode, 1000W, 80V V(RWM), Bidirectional, 1 Element, Silicon,
Parameter Name | Attribute value |
Objectid | 8087733197 |
package instruction | R-PDSO-F2 |
Reach Compliance Code | compliant |
Country Of Origin | Mainland China, Taiwan |
ECCN code | EAR99 |
YTEOL | 7.06 |
Other features | EXCELLENT CLAMPING CAPABILITY |
Maximum breakdown voltage | 97.6 V |
Minimum breakdown voltage | 88.8 V |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 code | R-PDSO-F2 |
Maximum non-repetitive peak reverse power dissipation | 1000 W |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -55 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
polarity | BIDIRECTIONAL |
Maximum power dissipation | 0.4 W |
Maximum repetitive peak reverse voltage | 80 V |
surface mount | YES |
technology | AVALANCHE |
Terminal form | FLAT |
Terminal location | DUAL |