EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

EGP30ATR

Description
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size85KB,2 Pages
ManufacturerFagor Electrónica
Environmental Compliance
Download Datasheet Parametric Compare View All

EGP30ATR Overview

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, PLASTIC PACKAGE-2

EGP30ATR Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFagor Electrónica
package instructionPLASTIC PACKAGE-2
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
applicationULTRA FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak forward current125 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
Maximum reverse recovery time0.05 µs
surface mountNO
technologyAVALANCHE
Terminal surfaceTIN
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

EGP30ATR Related Products

EGP30ATR EGP30GTR EGP30DTR EGP30FTR EGP30AAMP EGP30BAMP EGP30BTR EGP30DAMP EGP30FAMP
Description Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, PLASTIC PACKAGE-2 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, PLASTIC PACKAGE-2 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, PLASTIC PACKAGE-2 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, PLASTIC PACKAGE-2 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, PLASTIC PACKAGE-2 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, PLASTIC PACKAGE-2 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, PLASTIC PACKAGE-2 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, PLASTIC PACKAGE-2 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, PLASTIC PACKAGE-2
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to conform to
package instruction PLASTIC PACKAGE-2 O-PALF-W2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2
Contacts 2 2 2 2 2 2 2 2 2
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
application ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.95 V 1.25 V 0.95 V 1.25 V 0.95 V 0.95 V 0.95 V 0.95 V 1.25 V
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
JESD-609 code e3 e3 e3 e3 e3 e3 e3 e3 e3
Maximum non-repetitive peak forward current 125 A 125 A 125 A 125 A 125 A 125 A 125 A 125 A 125 A
Number of components 1 1 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 50 V 400 V 200 V 300 V 50 V 100 V 100 V 200 V 300 V
Maximum reverse recovery time 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.05 µs
surface mount NO NO NO NO NO NO NO NO NO
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal surface TIN TIN TIN TIN TIN TIN TIN TIN TIN
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maker Fagor Electrónica Fagor Electrónica - - Fagor Electrónica Fagor Electrónica Fagor Electrónica Fagor Electrónica Fagor Electrónica
Introduction to Zigbee communication technology transmission distance and wall penetration capability
[size=4] Zigbee is mainly used between various electronic devices within a short range and with low data transmission rates. The name Zigbee comes from the communication method used by bee colonies fo...
fish001 RF/Wirelessly
51 single chip microcomputer
How to program in C language when the digital tube changes once and the LED flashes once?...
生来不会 51mcu
HyperLynx High-Speed Circuit Design and Simulation (XI) Quantitative Analysis of Signal Overdrive and Underdrive
#HyperLynx High-speed Circuit Design and Simulation (XI) Quantitative Analysis of Signal Overdrive and Underdrive##1. Reference Posts###[HyperLynx High-speed Circuit Design and Simulation (I) Transmis...
bqgup Innovation Lab
What are the turn-on voltage Vt and pinch-off voltage Vp of a field effect transistor? In the output characteristics of the field effect transistor shown in Figures 1.3.3 (a) and (b),
answer: For an enhanced insulated gate field effect transistor (MOSFET), there is no conductive channel at Vgs0, and there is a drain current Id only when Vgs reaches the turn-on voltage V. Therefore,...
fighting Analog electronics
TI seems to have a DCDC switching power supply verification platform, which is controlled by DSP and can achieve voltage boost or voltage reduction by controlling different NMOS.
It is a reference design, someone has posted it,It is a digital power supply with multiple NMOS, using DSP to control different NMOS to achieve different topologiesI forgot it now, I wonder if anyone ...
whuer TI Technology Forum
Data丨Xunwei IMX6ULL development board-main frequency and clock configuration routine (Part 2)
Continued from the previous article: as followsThis register uses two bits:STEP_SEL: Select the setp_clk clock source.PLL1_SW_CLK_SEL: Select the pll1_sw_clk clock source.At this point, we can simply ...
遥寄山川 ARM Technology

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号