Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Maker | Microsemi |
Parts packaging code | TO-264AA |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Contacts | 3 |
Reach Compliance Code | compliant |
Avalanche Energy Efficiency Rating (Eas) | 3000 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 1000 V |
Maximum drain current (ID) | 25 A |
Maximum drain-source on-resistance | 0.4 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-264AA |
JESD-30 code | R-PSFM-T3 |
JESD-609 code | e1 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 100 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | TIN SILVER COPPER |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |
APT10040LVFRG | APT10040LVFR | APT10040B2VFRG | |
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Description | Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 |
Is it lead-free? | Lead free | Contains lead | Lead free |
Is it Rohs certified? | conform to | incompatible | conform to |
Maker | Microsemi | Microsemi | Microsemi |
package instruction | FLANGE MOUNT, R-PSFM-T3 | TO-264, 3 PIN | IN-LINE, R-PSIP-T3 |
Contacts | 3 | 3 | 3 |
Reach Compliance Code | compliant | unknown | compli |
Avalanche Energy Efficiency Rating (Eas) | 3000 mJ | 3000 mJ | 3000 mJ |
Shell connection | DRAIN | DRAIN | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 1000 V | 1000 V | 1000 V |
Maximum drain current (ID) | 25 A | 25 A | 25 A |
Maximum drain-source on-resistance | 0.4 Ω | 0.4 Ω | 0.4 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSIP-T3 |
Number of components | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C | 150 °C | 150 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | FLANGE MOUNT | FLANGE MOUNT | IN-LINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Maximum pulsed drain current (IDM) | 100 A | 100 A | 100 A |
Certification status | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal location | SINGLE | SINGLE | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
transistor applications | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON |
Parts packaging code | TO-264AA | TO-264AA | - |
JEDEC-95 code | TO-264AA | TO-264AA | - |
JESD-609 code | e1 | - | e1 |
Terminal surface | TIN SILVER COPPER | - | TIN SILVER COPPER |
Base Number Matches | 1 | 1 | - |