IRFN9034PBF datasheet, PDF - EEWORLD Datasheet

IRFN9034PBF: Description12A, 60V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size33KB，1 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IRFN9034PBF Overview

12A, 60V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	CHIP CARRIER, R-CBCC-N3
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	12 A
Maximum drain-source on-resistance	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CBCC-N3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

	IRFN9034PBF	IRFN9034
Description	12A, 60V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET	Power Field-Effect Transistor, 12A I(D), 60V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
Is it Rohs certified?	conform to	incompatible
Maker	Infineon	Infineon
package instruction	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	60 V	60 V
Maximum drain current (ID)	12 A	12 A
Maximum drain-source on-resistance	0.2 Ω	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CBCC-N3	R-CBCC-N3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	P-CHANNEL	P-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	NO LEAD	NO LEAD
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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