5 A, 40 V, SILICON, RECTIFIER DIODE
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Philips Semiconductors (NXP Semiconductors N.V.) |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Diode type | RECTIFIER DIODE |
Maximum forward voltage (VF) | 0.87 V |
JESD-609 code | e0 |
Maximum non-repetitive peak forward current | 90 A |
Maximum operating temperature | 50 °C |
Maximum output current | 8.8 A |
Maximum repetitive peak reverse voltage | 40 V |
surface mount | NO |
technology | SCHOTTKY |
Terminal surface | Tin/Lead (Sn/Pb) |
PBYR640CT | PBYR645CT | PBYR635CT | |
---|---|---|---|
Description | 5 A, 40 V, SILICON, RECTIFIER DIODE | 5 A, 45 V, SILICON, RECTIFIER DIODE | 5 A, 35 V, SILICON, RECTIFIER DIODE |
Is it Rohs certified? | incompatible | incompatible | incompatible |
Maker | Philips Semiconductors (NXP Semiconductors N.V.) | Philips Semiconductors (NXP Semiconductors N.V.) | Philips Semiconductors (NXP Semiconductors N.V.) |
Reach Compliance Code | unknown | unknow | unknow |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
Maximum forward voltage (VF) | 0.87 V | 0.87 V | 0.87 V |
JESD-609 code | e0 | e0 | e0 |
Maximum non-repetitive peak forward current | 90 A | 90 A | 90 A |
Maximum operating temperature | 50 °C | 150 °C | 150 °C |
Maximum output current | 8.8 A | 8.8 A | 8.8 A |
Maximum repetitive peak reverse voltage | 40 V | 45 V | 35 V |
surface mount | NO | NO | NO |
technology | SCHOTTKY | SCHOTTKY | SCHOTTKY |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |