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MSM514101B-70TS-L

Description
Nibble Mode DRAM, 4MX1, 70ns, CMOS, PDSO20
Categorystorage    storage   
File Size727KB,15 Pages
ManufacturerLAPIS Semiconductor Co., Ltd.
Download Datasheet Parametric View All

MSM514101B-70TS-L Overview

Nibble Mode DRAM, 4MX1, 70ns, CMOS, PDSO20

MSM514101B-70TS-L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1156939773
package instructionTSSOP, TSSOP20/26,.36
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time70 ns
I/O typeSEPARATE
JESD-30 codeR-PDSO-G20
JESD-609 codee0
memory density4194304 bit
Memory IC TypeNIBBLE MODE DRAM
memory width1
Number of terminals20
word count4194304 words
character code4000000
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX1
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP20/26,.36
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Certification statusNot Qualified
refresh cycle1024
reverse pinoutYES
Maximum standby current0.001 A
Maximum slew rate0.09 mA
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.635 mm
Terminal locationDUAL

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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