Mixer Diode, Low Barrier, X Band, Silicon
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Objectid | 4016604886 |
package instruction | S-PXMW-F3 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
YTEOL | 4 |
Minimum breakdown voltage | 2 V |
Configuration | COMMON CATHODE, 2 ELEMENTS |
Maximum diode capacitance | 0.15 pF |
Diode component materials | SILICON |
Diode type | MIXER DIODE |
Maximum forward voltage (VF) | 0.35 V |
frequency band | X BAND |
JESD-30 code | S-PXMW-F3 |
JESD-609 code | e0 |
Number of components | 2 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -65 °C |
Package body material | PLASTIC/EPOXY |
Package shape | SQUARE |
Package form | MICROWAVE |
Maximum power dissipation | 0.1 W |
Certification status | Not Qualified |
surface mount | YES |
technology | SCHOTTKY |
Terminal surface | TIN LEAD |
Terminal form | FLAT |
Terminal location | UNSPECIFIED |
Schottky barrier type | LOW BARRIER |