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EM636165TS-8G

Description
Synchronous DRAM, 1MX16, 6.5ns, CMOS, PDSO50
Categorystorage    storage   
File Size789KB,75 Pages
ManufacturerEtron
Websitehttp://www.etron.com/
Environmental Compliance
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EM636165TS-8G Overview

Synchronous DRAM, 1MX16, 6.5ns, CMOS, PDSO50

EM636165TS-8G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid106352991
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time6.5 ns
Maximum clock frequency (fCLK)125 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PDSO-G50
memory density16777216 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width16
Number of terminals50
word count1048576 words
character code1000000
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP
Encapsulate equivalent codeTSOP50,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Continuous burst length1,2,4,8,FP
Maximum standby current0.002 A
Maximum slew rate0.13 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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