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V58C2512164SFLJ75

Description
DDR DRAM,
Categorystorage    storage   
File Size1MB,61 Pages
ManufacturerProMOS Technologies Inc
Download Datasheet Parametric View All

V58C2512164SFLJ75 Overview

DDR DRAM,

V58C2512164SFLJ75 Parametric

Parameter NameAttribute value
Objectid8309607259
package instructionTBGA,
Reach Compliance Codecompliant
Country Of OriginMainland China
ECCN codeEAR99
YTEOL4.6
access modeFOUR BANK PAGE BURST
Maximum access time0.75 ns
Other featuresAUTO/SELF REFRESH; TERM PITCH-MAX
JESD-30 codeR-PBGA-B60
length12 mm
memory density536870912 bit
Memory IC TypeDDR1 DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals60
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
width10 mm
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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