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M68AW256DM70ZB6

Description
IC,SRAM,256KX16,CMOS,BGA,48PIN,PLASTIC
Categorystorage    storage   
File Size284KB,20 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance  
Download Datasheet Parametric View All

M68AW256DM70ZB6 Overview

IC,SRAM,256KX16,CMOS,BGA,48PIN,PLASTIC

M68AW256DM70ZB6 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Objectid1125528801
package instructionTFBGA-48
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time20 ns
I/O typeCOMMON
JESD-30 codeR-PBGA-B48
JESD-609 codee1
length8 mm
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width16
Number of functions1
Number of terminals48
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA48,6X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
power supply3/3.3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Minimum standby current1 V
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
width7 mm
M68AW256D
4 Mbit (256K x16) 3.0V Asynchronous SRAM
FEATURES SUMMARY
s
SUPPLY VOLTAGE: 2.7 to 3.6V
s
s
s
s
s
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Figure 1. Packages
256K x 16 bits SRAM with OUTPUT ENABLE
EQUAL CYCLE and ACCESS TIME: 55ns
SINGLE BYTE READ/WRITE
LOW STANDBY CURRENT
LOW V
CC
DATA RETENTION: 1.5V
TRI-STATE COMMON I/O
AUTOMATIC POWER DOWN
DUAL CHIP ENABLE for EASY DEPTH
EXPANSION
BGA
1
44
TSOP44 Type II (ND)
TFBGA48 (ZB)
7 x 8 mm
April 2003
1/20

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