M5M4V16160DTP-5S datasheet, PDF

M5M4V16160DTP-5S: DescriptionFast Page DRAM, 1MX16, 50ns, CMOS, PDSO44; Categorystorage storage; File Size2MB，30 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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M5M4V16160DTP-5S Overview

Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO44

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	1164773929
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	50 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G44
JESD-609 code	e0
memory density	16777216 bit
Memory IC Type	FAST PAGE DRAM
memory width	16
Number of terminals	44
word count	1048576 words
character code	1000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP
Encapsulate equivalent code	TSOP44/50,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
self refresh	YES
Maximum standby current	0.00015 A
Maximum slew rate	0.12 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL

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