KSD288
KSD288
Power Regulator
Low Frequency High Power Amplifier
• Collector-Base Voltage : V
CBO
=80V
• Collector Dissipation : P
C
=25W(T
C
=25°C)
TO-220
2.Collector
3.Emitter
1
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
80
55
5
3
25
150
- 55 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE
(sat)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Test Condition
I
C
=500µA, I
E
=0
I
C
=10mA,I
B
=0
I
E
=500µA, I
C
=0
V
CB
=50V,I
E
=0
V
CE
=5V,I
C
=0.5A
I
C
=1A, I
B
=0.1A
40
Min.
80
55
5
50
240
1
V
Typ.
Max.
Units
V
V
V
µA
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD288
Typical Characteristics
2.0
1.8
10000
I
B
= 10mA
I
B
= 9mA
V
CE
= 5V
Ic[A], COLLECTOR CURRENT
1.6
1.4
1.2
1.0
0.8
0.6
I
B
= 7mA
I
B
= 6mA
I
B
= 5mA
I
B
= 4mA
I
B
= 3mA
I
B
= 2mA
h
FE
, DC CURRENT GAIN
I
B
= 8mA
1000
100
0.4
0.2
I
B
= 1mA
10
0.01
0
2
4
6
8
10
12
14
16
18
20
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
1000
Ic = 10 I
B
f = 1MHz
I
E
=0
C
OB
[pF], CAPACITANCE
1
V
BE
(sat)
100
0.1
)
(sat
V
CE
10
0.01
0.1
1
10
1
1
10
100
I
C
[A], COLLECTOR CURRENT
V
CB
[V], COLLECTOR BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
10
40
I
C
[A], COLLECTOR CURRENT
P
C
[W], POWER DISSIPATION
1.Tc=25 C
2.*Single Pulse
Thermal limitation
DC
1
o
*1ms
Thermal limitation
35
30
S/B limitation
25
20
15
S/B limitation
10
5
0.1
1
10
100
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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©2000 Fairchild Semiconductor International
Rev. E
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