SEP8705
AlGaAs Infrared Emitting Diode
FEATURES
•
T-1 package
•
15¡ (nominal) beam angle
•
880 nm wavelength
•
Consistent optical properties
•
Higher output than GaAs at equivalent drive
current
•
Mechanically and spectrally matched to
SDP8405 phototransistor and SDP8105
photodarlington
INFRA-55.TIF
DESCRIPTION
The SEP8705 is an aluminum gallium arsenide infrared
emitting diode transfer molded in a T-1 smoke gray
plastic package. Transfer molding of this device assures
superior optical centerline performance compared to
other molding processes. These devices typically
exhibit 70% greater power intensity compared to GaAs
devices at the same forward current. Lead lengths are
staggered to provide a simple method of polarity
identification.
OUTLINE DIMENSIONS
in inches (mm)
Tolerance
3 plc decimals
±0.005(0.12)
2 plc decimals
±0.020(0.51)
.200 (5.08)
.180 (4.57)
.03 (.76)
.05(1.27)
CATHODE
ANODE
.125 (3.18)
.115 (2.92)
DIA.
.500
MIN.
(12.7)
.155
DIA.
(3.94)
.020 SQ. LEAD TYP
(.51)
.050
(1.27)
.250
(6.35)
MAX.
DIM_101.ds4
48
h
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SEP8705
AlGaAs Infrared Emitting Diode
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Soldering Temperature (5 sec)
50 mA
70 mW [À]
-40¡C to 85¡C
-40¡C to 85¡C
240¡C
SCHEMATIC
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
0.18 mW/¡C.
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
49
SEP8705
AlGaAs Infrared Emitting Diode
Fig. 1
Radiant Intensity vs
Angular Displacement
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-40
-30
-20
-10
0
+10 +20 +30 +40
Fig. 2
gra_027.ds4
Radiant Intensity vs
Forward Current
10.0
5.0
2.0
1.0
0.5
0.2
0.1
10
20
30
40 50
gra_028.ds4
Normalized radiant intensity
Relative intensity
T
A
= 25 °C
100
Angular displacement - degrees
Fig. 3
Forward Voltage vs
Forward Current
1.6
Forward current - mA
Fig. 4
Forward Voltage vs
Temperature
1.60
1.55
1.50
1.45
1.40
1.35
1.30
1.25
1.20
I
F
= 20 mA
gra_201.ds4
gra_208.ds4
1.4
1.3
1.2
1.1
1.0
0
10
20
30
40
50
Forward voltage - V
Forward voltage - V
1.5
-40
-15
10
35
60
85
Forward current - mA
Fig. 5
Spectral Bandwidth
gra_011.ds4
Temperature - °C
Fig. 6
Coupling Characteristics
with SDP8405
10
7
gra_029.ds4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
760
800
840
880
920
960
1000
Light current - mA
Relative intensity
4
2
1
0.7
0.4
0.2
0.1
0.01
0.02 0.04
V
CE
= 5 V
I
F
= 25 mA
T
A
= 25 °C
0.1
0.2
0.4 0.7 1
Wavelength - nm
Lens-to-lens separation - inches
50
h
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SEP8705
AlGaAs Infrared Emitting Diode
Fig. 7
Relative Power Output vs
Free Air Temperature
10
5.0
2.0
1.0
0.5
gra_130.ds4
Relative power output
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
0.2
0.1
-50
-25
0
+25
+50
+75
+100
T
A
- Free-air temperature - (°C)
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
51
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