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K7A163600M-HC15

Description
Cache SRAM, 512KX36, 3.8ns, CMOS, PBGA119, BGA-119
Categorystorage    storage   
File Size409KB,20 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K7A163600M-HC15 Overview

Cache SRAM, 512KX36, 3.8ns, CMOS, PBGA119, BGA-119

K7A163600M-HC15 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1507095920
Parts packaging codeBGA
package instructionBGA, BGA119,7X17,50
Contacts119
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time3.8 ns
Other featuresALSO REQUIRES 3.3V/2.5V I/O SUPPLY
Maximum clock frequency (fCLK)150 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B119
JESD-609 codee0
length22 mm
memory density18874368 bit
Memory IC TypeCACHE SRAM
memory width36
Number of functions1
Number of terminals119
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA119,7X17,50
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
power supply2.5/3.3,3.3 V
Certification statusNot Qualified
Maximum standby current0.03 A
Minimum standby current3.14 V
Maximum slew rate0.4 mA
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN LEAD
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
width14 mm
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