IP4264CZ8-20; IP4264CZ8-40
Integrated USIM/SIM card passive filter arrays with
ESD protection
Rev. 3 — 22 July 2010
Product data sheet
1. Product profile
1.1 General description
The IP4264CZ8-20 and IP4264CZ8-40 are 3-channel RC low-pass filter arrays which are
designed to provide filtering of undesired RF signals in the 800 MHz-to-6000 MHz
frequency band. In addition, the IP4264CZ8-20 and IP4264CZ8-40 incorporate diodes to
provide protection to downstream components from ElectroStatic Discharge (ESD)
voltages up to
±25
kV contact and higher than
±25
kV air discharge far exceeding
IEC 61000-4-2, level 4.
Both IP4264CZ8-20 and IP4264CZ8-40 support ESD protection of the USB data pins of
an Universal Subscriber Identity Module (USIM) interface as well as the digital standard
SIM interface ESD protection and ElectroMagnetic Interface (EMI) filtering.
The IP4264CZ8-20 and IP4264CZ8-40 are fabricated using monolithic silicon technology.
They integrate three resistors and seven high-level ESD protection diodes in a 0.4 mm
pitch 8-pin Micropak (compatible with Quad Flat-pack No-leads (QFN)) lead-free plastic
package with a height of only 0.5 mm.
These features make the IP4264CZ8-20 and IP4264CZ8-40 ideal for use in applications
requiring component miniaturization such as mobile phone handsets, cordless telephones
and personal digital devices.
The devices are also available in Wafer Level Chip-Size Package (WLCSP):
WLCSP11 (for USIM) with 0.4 mm pitch (IP4365CX11), and WLCSP8 (for SIM) with both
0.4 mm pitch (IP4364CX8/LF) and 0.5 mm pitch (IP4064CX8/LF).
1.2 Features and benefits
Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen
and antimony (Dark Green compliant)
3-channel SIM card interface with integrated RC-filter array and SIM voltage
ESD protection
2 USIM (USB1.1) compliant ESD protection diodes with 20 pF channel capacitance
Integrated 100
Ω/100 Ω/47 Ω
series channel resistors
Total channel capacitance of 20 pF (IP4264CZ8-20) or 40 pF (IP4264CZ8-40)
Downstream ESD protection up to
±25
kV (contact) according to IEC 61000-4-2
Micropak (QFN compatible) plastic package with 0.4 mm pitch
Also available in WLCSP11: IP4365CX11 (USIM interface) and
in WLCSP8: IP4364CX8/LF (0.4 mm pitch) and IP4064CX8/LF or IP4044CX8/LF
(both using 0.5 mm pitch, SIM interface)
NXP Semiconductors
IP4264CZ8-20; IP4264CZ8-40
Integrated USIM/SIM card passive filter arrays with ESD protection
1.3 Applications
USIM and SIM interfaces in e.g. cellular and Personal Communication System (PCS)
mobile handsets
2. Pinning information
Table 1.
Pin
1 and 8
2 and 7
3 and 6
4 and 5
GND
Pinning
Description
filter channel 1
filter channel 2
filter channel 3
ESD protection
ground
1
4
Transparent
top view
2
47
Ω
R3
Simplified outline
8
5
Graphic symbol
R1
1
100
Ω
R2
8
7
3
100
Ω
6
5
4
018aaa015
3. Ordering information
Table 2.
Ordering information
Package
Name
IP4264CZ8-20
IP4264CZ8-40
HXSON8U
Description
plastic thermal enhanced extremely thin small outline package; no leads;
8 terminals; UTLP based; body 1.35
×
1.7
×
0.5 mm
Version
SOT983-1
Type number
4. Marking
Table 3.
Marking codes
Marking code
N2
N4
Type number
IP4264CZ8-20
IP4264CZ8-40
IP4264CZ8-20_IP4264CZ8-40
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2010
2 of 12
NXP Semiconductors
IP4264CZ8-20; IP4264CZ8-40
Integrated USIM/SIM card passive filter arrays with ESD protection
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
I
V
ESD
Parameter
input voltage
electrostatic
discharge voltage
IP4264CZ8-20
IP4264CZ8-40
Conditions
at I/O pins
all pins to ground
contact discharge
air discharge
contact discharge
air discharge
IEC 61000-4-2, level 4;
all pins to ground
contact discharge
air discharge
P
ch
P
tot
T
stg
channel power
dissipation
storage temperature
t
p
≤
10 s
T
amb
= 70
°C
-
-
-
-
−55
-
−35
±8
±15
60
180
+150
260
+85
kV
kV
mW
mW
°C
°C
°C
[1]
[1]
[2]
[2]
Min
−0.5
Max
+5.5
Unit
V
-
-
-
-
±15
±15
±25
±25
kV
kV
kV
kV
total power dissipation T
amb
= 70
°C
T
reflow(peak)
peak reflow
temperature
T
amb
[1]
[2]
ambient temperature
IP4264CZ8-20 is qualified to 1000 contact discharges of
±15
kV using the IEC 61000-4-2 model far
exceeding the specified IEC 61000-4-2, level 4 (8 kV contact discharge).
IP4264CZ8-40 is qualified to 1000 contact discharges of
±25
kV using the IEC 61000-4-2 model far
exceeding the specified IEC 61000-4-2, level 4 (8 kV contact discharge).
IP4264CZ8-20_IP4264CZ8-40
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2010
3 of 12
NXP Semiconductors
IP4264CZ8-20; IP4264CZ8-40
Integrated USIM/SIM card passive filter arrays with ESD protection
6. Characteristics
Table 5.
Channel resistance
T
amb
= 25
°
C unless otherwise specified.
Symbol
R
s(ch)
Parameter
channel series
resistance
Conditions
R1, R3
R2
Min
75
35.2
Typ
100
47
Max
125
58.8
Unit
Ω
Ω
Table 6.
Channel characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
C
ch
Parameter
channel capacitance
Conditions
f = 1 MHz
V
bias(DC)
= 0 V
V
bias(DC)
= 2.5 V
IP4264CZ8-40
C
ch
channel capacitance
f = 1 MHz
V
bias(DC)
= 0 V
V
bias(DC)
= 2.5 V
IP4264CZ8-20; IP4264CZ8-40
C
d
diode capacitance
f = 1 MHz
V
bias(DC)
= 0 V
V
bias(DC)
= 2.5 V
I
RM
V
BR
[1]
[2]
[3]
[3]
[1][2]
[1][2]
Min
Typ
Max
Unit
IP4264CZ8-20
-
-
17
11
20
15
pF
pF
-
-
35
23
40
28
pF
pF
12
8
-
6
16
11
-
-
20
14
50
10
pF
pF
nA
V
reverse leakage
current
breakdown voltage
Guaranteed by design.
V
I
= 3 V
I
test
= 1 mA
Total line capacitance including diode capacitance, per channel.
Measured between pins 4 and 5.
IP4264CZ8-20_IP4264CZ8-40
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2010
4 of 12
NXP Semiconductors
IP4264CZ8-20; IP4264CZ8-40
Integrated USIM/SIM card passive filter arrays with ESD protection
7. Application information
7.1 Insertion loss
The IP4264CZ8-20 and IP4264CZ8-40 are mainly designed as EMI/Radio Frequency
Interference (RFI) filters for SIM card interfaces. The setup for measuring the return loss
is shown in
Figure 1.
The insertion loss in a 50
Ω
system for all three channels of the IP4264CZ8-20 with a line
capacitance of
≤
20 pF total channel capacitance is shown in
Figure 2.
And the insertion loss for IP4264CZ8-40 with a line capacitance of
≤
40 pF channel
capacitance is shown in
Figure 3.
DUT
IN
50
Ω
OUT
TEST BOARD
50
Ω
Vgen
018aaa016
Fig 1.
0
S
21
(dB)
Frequency response setup
018aaa017
0
S
21
(dB)
018aaa018
(1)
(1)
−10
−10
−20
(2)
−20
(2)
−30
(3)
−30
(3)
−40
10
−1
1
10
10
2
10
3
10
4
f (MHz)
−40
10
−1
1
10
10
2
10
3
10
4
f (MHz)
C
ch
= 20 pF
(1) Pin 2 to 7
(2) Pin 1 to 8
(3) Pin 3 to 6
C
ch
= 40 pF
(1) Pin 2 to 7
(2) Pin 1 to 8
(3) Pin 3 to 6
Fig 2.
Frequency response curves for IP4264CZ8-20
Fig 3.
Frequency response curves for IP4264CZ8-40
IP4264CZ8-20_IP4264CZ8-40
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2010
5 of 12
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