MM54C910J/883B datasheet, PDF - EEWORLD Datasheet

MM54C910J/883B: DescriptionIC,SRAM,64X4,CMOS,DIP,18PIN,CERAMIC; Categorystorage storage; File Size244KB，5 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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MM54C910J/883B Overview

IC,SRAM,64X4,CMOS,DIP,18PIN,CERAMIC

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	1435213488
package instruction	DIP, DIP18,.3
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
I/O type	SEPARATE
JESD-30 code	R-XDIP-T18
JESD-609 code	e0
Memory IC Type	STANDARD SRAM
memory width	4
Number of terminals	18
word count	64 words
character code	64
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	64X4
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP18,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

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