KBP005M thru KBP10M, 3N246 thru 3N252
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit board
• High surge current capability
−
~
~
+
Case Style KBPM
+
~
~
−
e4
• High case dielectric strength
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for switching power supply, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case:
KBPM
Epoxy meets UL 94V-0 flammability rating
Terminals:
Silver plated leads, solderable per
J-STD-002 and JESD22-B102
E4 suffix for consumer grade
Polarity:
As marked on body
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J
max.
1.5 A
50 V to 1000 V
60 A
5 µA
1.0 V
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse
Maximum RMS voltage
(1)
(1)
SYMBOL
voltage
(1)
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
KBP
005M
3N246
50
35
50
KBP
01M
3N247
100
70
100
KBP
02M
3N248
200
140
200
KBP
04M
3N249
400
280
400
1.5
60
40
10
- 55 to + 150
KBP
06M
3N250
600
420
600
KBP
08M
3N251
800
560
800
KBP
10M
3N252
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
°C
Maximum DC blocking voltage
Maximum average forward output rectified
current at T
A
= 40 °C
Peak forward surge current
single half sine-wave
(1)
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
(1)
Note:
(1) JEDEC registered values
T
A
= 25 °C
T
J
= 150 °C
Document Number: 88531
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
KBP005M thru KBP10M, 3N246 thru 3N252
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
1.0 A
1.57 A
T
A
= 25 °C
T
A
= 125 °C
4.0 V, 1 MHz
SYMBOL
KBP
005M
3N246
Maximum instantaneous forward
voltage drop per diode
(1)
Maximum DC reverse current
at rated DC blocking voltage
per diode
(1)
Typical junction capacitance
per diode
Note:
(1) JEDEC registered values
V
F
KBP
01M
3N247
KBP
02M
3N248
KBP
04M
3N249
1.0
1.3
5.0
500
15
KBP
06M
3N250
KBP
08M
3N251
KBP
10M
3N252
V
UNIT
I
R
µA
C
J
pF
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
KBP
005M
3N246
Typical thermal resistance
(1)
R
θJA
R
θJL
KBP
01M
3N247
KBP
02M
3N248
KBP
04M
3N249
40
13
KBP
06M
3N250
KBP
08M
3N251
KBP
10M
3N252
°C/W
UNIT
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" (12 x 12 mm) copper pads
ORDERING INFORMATION
(Example)
PREFERRED P/N
KBP06M-E4/45
KBP06M-E4/51
3N250-E4/45
3N250-E4/51
UNIT WEIGHT (g)
1.895
1.895
1.895
1.895
PREFERRED PACKAGE CODE
45
51
45
51
BASE QUANTITY
30
600
30
600
DELIVERY MODE
Tube
Anti-static PVC tray
Tube
Anti-static PVC tray
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
1.6
60
Bridge Output Full
Wave
Rectified
Current Average (A)
Peak Forward Surge Current (A)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
20
40
60
80
Capacitive Load
I
pk
5.0
= 10
I
AV
20
(per leg)
60 Hz Resistive or
Inductive Load
P.C.B. Mounted on
0.47 x 0.47" (12 x 12 mm)
Copper Pads
Single Half Sine-Wave
50
T
A
= 25 °C
40
30
T
J
= 150 °C
20
10
1.0 Cycle
0
100
120
140 150
1
10
100
Ambient Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Derating Curve Output Rectified Current
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Document Number: 88531
Revision: 15-Apr-08
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
KBP005M thru KBP10M, 3N246 thru 3N252
Vishay General Semiconductor
100
100
T
J
= 25 °C
Pulse
Width
= 300
µs
1 % Duty Cycle
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Instantaneous Forward Current (A)
10
Junction Capacitance (pF)
1
10
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
10
Instantaneous Reverse Current (µA)
T
J
= 125 °C
1
T
J
= 100 °C
0.1
T
J
= 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse
Voltage
(%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Case Style KBPM
0.125 x 45°
(3.2)
0.600 (15.24)
0.560 (14.22)
0.460 (11.68) 0.500 (12.70)
0.420 (10.67) 0.460 (11.68)
0.60
(15.2)
MIN.
0.060
(1.52)
0.160 (4.1)
0.140 (3.6)
0.50 (12.7) MIN.
0.034 (0.86)
0.028 (0.76)
DIA.
0.200 (5.08)
0.180 (4.57)
0.105 (2.67)
0.085 (2.16)
Polarity shown on front side of case: positive lead
by beveled
corner
Document Number: 88531
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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www.vishay.com
Vishay
Disclaimer
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000