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3KBP02M-E4/45

Description
diode bridge 3A 200v kbpm
CategoryDiscrete semiconductor    diode   
File Size99KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

3KBP02M-E4/45 Overview

diode bridge 3A 200v kbpm

3KBP02M-E4/45 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
package instructionR-PSIP-W4
Contacts4
Manufacturer packaging codeCASE KBPM
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresUL RECOGNIZED
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.05 V
JESD-30 codeR-PSIP-W4
JESD-609 codee4
Maximum non-repetitive peak forward current80 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal surfaceSilver (Ag)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
Base Number Matches1
V10D100C-M3, V10D100CHM3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.48 V at I
F
= 2.5 A
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
eSMP
®
Series
TO-263AC (SMPD)
K
FEATURES
• Trench MOS Schottky technology generation 2
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
1
2
Top View
Bottom View
• AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
V10D100C
PIN 1
PIN 2
K
HEATSINK
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection in commercial, inductrial, and
automotive application.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 5.0 A (T
A
= 125 °C)
T
J
max.
Package
Diode variations
2 x 5.0 A
100 V
100 A
0.60 V
150 °C
TO-263AC (SMPD)
Dual common cathode
MECHANICAL DATA
Case:
TO-263AC (SMPD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity:
As marked
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
Maximum DC reverse voltage
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
per device
per diode
I
F(AV)
V
DC
I
FSM
dV/dt
T
J
, T
STG
SYMBOL
V
RRM
V10D100C
100
10
A
5
160
100
10 000
-40 to +150
V
A
V/μs
°C
UNIT
V
Revision: 06-Feb-15
Document Number: 89998
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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