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CMPT8099

Description
COMPLEMENTARY SILICON TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size48KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric Compare View All

CMPT8099 Overview

COMPLEMENTARY SILICON TRANSISTOR

CMPT8099 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)75
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1

CMPT8099 Related Products

CMPT8099 CMPT8599
Description COMPLEMENTARY SILICON TRANSISTOR COMPLEMENTARY SILICON TRANSISTOR
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
package instruction PLASTIC PACKAGE-3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3
Reach Compliance Code _compli _compli
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 80 V 80 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 75 75
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN PNP
Maximum power dissipation(Abs) 0.35 W 0.35 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz
Base Number Matches 1 1
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