HS9-6514RRH-Q
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Objectid | 1164791966 |
| package instruction | DFP, FL18,.3 |
| Reach Compliance Code | not_compliant |
| ECCN code | 3A001.A.2.C |
| Maximum access time | 120 ns |
| I/O type | COMMON |
| JESD-30 code | R-XDFP-F18 |
| JESD-609 code | e0 |
| memory density | 4096 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 4 |
| Number of terminals | 18 |
| word count | 1024 words |
| character code | 1000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 1KX4 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC |
| encapsulated code | DFP |
| Encapsulate equivalent code | FL18,.3 |
| Package shape | RECTANGULAR |
| Package form | FLATPACK |
| Parallel/Serial | PARALLEL |
| power supply | 5 V |
| Certification status | Not Qualified |
| Filter level | MIL-STD-883 Class S (Modified) |
| Maximum standby current | 0.000004 A |
| Minimum standby current | 1.8 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | FLAT |
| Terminal pitch | 1.27 mm |
| Terminal location | DUAL |
| total dose | 100k Rad(Si) V |
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