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RN2119MFV(TPL3)

Description
trans prebias pnp 150mw vesm
CategoryDiscrete semiconductor    The transistor   
File Size156KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

RN2119MFV(TPL3) Overview

trans prebias pnp 150mw vesm

RN2119MFV(TPL3) Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Reach Compliance Codeunknow
Factory Lead Time12 weeks
RN2119MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2119MFV
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
0.22±0.05
Unit: mm
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1119MFV
1.2±0.05
0.8±0.05
0.4
1.2±0.05
0.8±0.05
0.32±0.05
0.13±0.05
1.BASE
2.EMITTER
3.COLLECTOR
1
2
3
VESM
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note1)
T
j
T
stg
Rating
−50
−50
−5
−100
150
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 1.5 mg (typ.)
0.5±0.05
0.4
Equivalent Circuit
2-1L1A
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4
mm
×
25.4 mm
×
1.6 mmt)
(unit: mm)
Land Pattern Sample
0.5
0.45
1.15
0.4
0.45
0.4
0.4
Start of commercial production
2005-09
1
2014-03-01

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Description trans prebias pnp 150mw vesm Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Maker Toshiba Semiconductor Toshiba Semiconductor
Reach Compliance Code unknow unknown
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