DDR DRAM,
| Parameter Name | Attribute value |
| Objectid | 8309607617 |
| package instruction | TFBGA, |
| Reach Compliance Code | compliant |
| Country Of Origin | Mainland China |
| ECCN code | EAR99 |
| YTEOL | 4.75 |
| access mode | MULTI BANK PAGE BURST |
| Maximum access time | 0.4 ns |
| Other features | AUTO/SELF REFRESH |
| JESD-30 code | R-PBGA-B84 |
| length | 13.5 mm |
| memory density | 2147483648 bit |
| Memory IC Type | DDR2 DRAM |
| memory width | 16 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 84 |
| word count | 134217728 words |
| character code | 128000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 95 °C |
| Minimum operating temperature | |
| organize | 128MX16 |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | TFBGA |
| Package shape | RECTANGULAR |
| Package form | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Maximum seat height | 1.2 mm |
| self refresh | YES |
| Maximum supply voltage (Vsup) | 1.9 V |
| Minimum supply voltage (Vsup) | 1.7 V |
| Nominal supply voltage (Vsup) | 1.8 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | OTHER |
| Terminal form | BALL |
| Terminal pitch | 0.8 mm |
| Terminal location | BOTTOM |
| width | 10.5 mm |
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