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NP90N04MUK-S18-AY

Description
mosfet N-CH 40v 90a TO-220
Categorysemiconductor    Discrete semiconductor   
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance  
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NP90N04MUK-S18-AY Overview

mosfet N-CH 40v 90a TO-220

NP90N04MUK-S18-AY Parametric

Parameter NameAttribute value
Datasheets
NP90N04MUK, NP90N04NUK
Standard Package50
CategoryDiscrete Semiconductor Products
FamilyFETs - Single
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Rds On (Max) @ Id, Vgs2.8 mOhm @ 45A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs120nC @ 10V
Input Capacitance (Ciss) @ Vds7050pF @ 25V
Power - Max1.8W
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220
Preliminary
Data Sheet
NP90N04MUK, NP90N04NUK
MOS FIELD EFFECT TRANSISTOR
Description
R07DS0601EJ0100
Rev.1.00
Jan 11, 2012
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
Super low on-state resistance
R
DS(on)
= 2.8 m MAX. (V
GS
= 10 V, I
D
= 45 A)
Low C
iss
: C
iss
= 4700 pF TYP. (V
DS
= 25 V)
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP90N04MUK-S18-AY
*
1
NP90N04NUK-S18-AY
Note:
*
1
Lead Plating
Pure Sn (Tin)
Packing
Tube 50 p/tube
Package
TO-220 (MP-25K)
TO-262 (MP-25SK)
*1
Pb-free (This product does not contain Pb in the external electrode)
Absolute Maximum Ratings
(T
A
= 25°C)
Item
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
*
1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current
*
2
Repetitive Avalanche Energy
*
2
Symbol
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AR
E
AR
Ratings
40
20
90
360
176
1.8
175
–55 to 175
43
185
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Notes:
*1
T
C
= 25°C, P
W
10
s,
Duty Cycle
1%
*2
R
G
= 25
,
V
GS
= 20
0 V
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
0.85
83.3
°C/W
°C/W
R07DS0601EJ0100 Rev.1.00
Jan 11, 2012
Page 1 of 6

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