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JANTXV2N7330R

Description
26A, 200V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE, TO-204AE, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size99KB,4 Pages
ManufacturerIntersil ( Renesas )
Websitehttp://www.intersil.com/cda/home/
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JANTXV2N7330R Overview

26A, 200V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE, TO-204AE, 2 PIN

JANTXV2N7330R Parametric

Parameter NameAttribute value
Objectid1438986863
Parts packaging codeBFM
package instructionFLANGE MOUNT, O-MBFM-P2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresRADIATION HARDENED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)26 A
Maximum drain-source on-resistance0.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-204AE
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)78 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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