• 1N5711 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/444
• 1N5712 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/445
• SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION
• SILICON DIOXIDE PASSIVATED
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER REFLOW
CD2810
CD5711
CD5712
CD6857
CD6858
CD6916
MAXIMUM RATINGS
Operating Temperature: -55°C to +125°C
Storage Temperature: -65°C to +150°C
15 MILS
BACKSIDE IS CATHODE
FIGURE 1
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
CDI
TYPE
NUMBER
MINIMUM
BREAKDOWN
VOLTAGE
(2)
V
BR
@ 10
µ
A
VOLTS
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM REVERSE
LEAKAGE CURRENT
V
MAXIMUM
CAPACITANCE @
= 0 VOLTS
R
f = 1.0 MH
Z
CT
FIGURE
NUMBER
VOLTS
0.41
0.41
0.41
0.35
0.36
VOLTS @ mA
1.0 @ 35
1.0 @15
1.0 @ 35
0.75 @ 35
0.65 @ 15
0.27 @ 0.1
nA
100
200
150
150
200
100
200
500
VOLTS
15
50
16
16
50
1
20
40
PICO FARADS
1.2
2.0
1.2
4.5
4.5
1
2
1
2
2
CD2810
CD5711
CD5712
CD6857
CD6858
20
70
20
20
70
15 MILS
CD6916
40
(2)
0.34
0.34 @ 1.0
0.47 @ 10.0
5
2
BACKSIDE IS CATHODE
FIGURE 2
NOTES:
(1) Effective Minority Carrier Lifetime (τ) is 100 Pico Seconds
(2) CD6916
V
BR
measured @ 500 nanoamps
DESIGN DATA
METALLIZATION:
Top: (Anode)...................... ..Al
Back: (Cathode)................. Au
o
AL THICKNESS.................25,000
A Min
o
GOLD THICKNESS...
..........4,000 A Min
CHIP THICKNESS.............
.........10 Mils
TOLERANCES:
ALL Dimensions
+ 2 mils, Except Anode Pad Where
Tolerance is + 0.5 mils.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
5.5 MILS
VF @ 1 mA
VF @ IF
1R @ VR
CD2810, CD5711, CD5712, CD6857, CD6858
and CD6916
100
IF – FORWARD CURRENT (mA)
10,000
IR – REVERSE CURRENT (nA)
10
1000
1.0
100
.1
10
.01
0
.2
.4
.6
.8
1.0
1.2
1.0
0
5.0
10
15
20
25
30
VF – FORWARD VOLTAGE (V)
VR – REVERSE VOLTAGE (V)
(PULSED)
Figure 2.
CD5712 and CD2810
Typical Variation of Reverse Current
(IR) vs. Reverse Voltage (VR) at Various
Temperatures.
Figure 1.
I-V Curve Showing Typical Forward
Voltage Variation with Temperature for the
CD5712 and CD2810 Schottky Diodes.
50
IF – FORWARD CURRENT (mA)
IR – REVERSE CURRENT (nA)
100,000
1000
10
5
10,000
RD – DYNAMIC RESISTANCE (!!)
0
10
20
30
40
50
60
1000
100
1
.5
.1
.05
100
10
10
.01
0
.2
.4
.6
.8
1.0
1.2
1
1
.1
1.0
10
100
VF – FORWARD VOLTAGE (V)
VR – REVERSE VOLTAGE (V)
(PULSED)
Figure 4.
CD5711 Typical Variation of Reverse Current
(IR) vs. Reverse Voltage (VR) at Various
Temperatures.
IF – FORWARD CURRENT (mA)
(PULSED)
Figure 5.
Typical DynamiC Resistance (RD) vs.
Forward Current (IF).
Figure 3.
I-V Curve Showing Typical Forward Voltage
Variation with Temperature for Schottky Diode
CD5711.
Microcontroller MCU
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