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CD5819

Description
1 A, 40 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size119KB,2 Pages
ManufacturerCDI-DIODE
Websitehttp://www.cdi-diodes.com
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CD5819 Overview

1 A, 40 V, SILICON, SIGNAL DIODE

1N5819 AND 1N6761 AVAILABLE IN
JANHC AND JANKC
PER MIL
PRF-19500/586
• 1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS
• SILICON DIOXIDE PASSIVATED
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER REFLOW
CD5817 thru CD5819
and
CD6759 thru CD6761
and
CD1A20 thru CD1A100
MAXIMUM RATINGS
Operating Temperature: -55°C to +125°C
Storage Temperature: -55°C to +150°C
Average Rectified Forward Current: 1.0 AMP @ +55°C
Derating: 14.3 mA / °C above +55°C
BACKSIDE IS CATHODE
FIGURE 1
CDI
TYPE
NUMBER
WORKING PEAK
REVERSE
VOLTAGE
MAXIMUM FORWARD VOLTAGE
MAXIMUM REVERSE
LEAKAGE CURRENT
AT RATED VOLTAGE
DESIGN DATA
METALLIZATION:
Top: (Anode).........................Al
Back: (Cathode) ....................Au
AL THICKNESS................25,000
Å
Min
GOLD THICKNESS...
.........4,000
Å
Min
VRWM
VF@0.1A
VF@1.0A
I R@25°C
I R@100°C
VOLTS
CD5817
CD5818
CD5819
JHC, JKC
5819
CD6759
CD6760
CD6761
JHC, JKC
6761
CD1A20
CD1A30
CD1A40
CD1A50
CD1A60
CD1A80
CD1A100
20
30
40
50
60
80
100
60
80
100
100
20
30
40
45
VOLTS
0.36
0.36
0.36
0.34
VOLTS
0.60
0.60
0.60
0.49
mA
0.10
0.10
0.10
0.05
mA
5.0
5.0
5.0
5.0
0.38
0.38
0.38
0.38
0.75
0.75
0.75
0.69
0.10
0.10
0.10
0.10
6.0
6.0
6.0
12.0
CHIP THICKNESS..............
........10 Mils
TOLERANCES:
ALL
Dimensions + 2 mils
0.36
0.36
0.36
0.36
0.38
0.38
0.38
0.60
0.60
0.60
0.60
0.75
0.75
0.75
0.10
0.10
0.10
0.10
0.10
0.10
0.10
5.0
5.0
5.0
5.0
12.0
12.0
12.0
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com

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