• GENERAL PURPOSE SILICON DIODES
• ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES
EXCEPT SOLDER REFLOW
CD483B
CD485B
CD486B
CD645
AND
CD5194 thru CD5196
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
24 MILS
12 MILS
TYPE
V(pk)
CD483B
CD485B
CD486B
CD645
CD5194
CD5195
CD5196
80
180
250
270
80
180
250
V(pk)
70
180
225
225
70
180
225
mA
200
200
200
400
200
200
200
mA
50
50
50
150
50
50
50
A
2
2
2
5
2
2
2
VF(1)
TYPE
V dc
CD483B
CD485B
CD486B
CD645
CD5194
CD5195
CD5196
0.8
0.8
0.8
0.8
0.8
0.8
0.8
-
-
-
-
-
-
-
1.0
1.0
1.0
1.0
1.0
1.0
1.0
IR1 at VRWM
TA+25
°
C
nA dc
25
25
25
50
25
25
25
IR2 at VRM
TA+25
°
C
IR3 at VRWM
TA+150
°
C
CAP
@VR
=4V
pF
–
–
–
2.0
–
–
–
µ
A
100
100
100
50
100
100
100
µ
A dc
5
5
5
25
5
5
5
DESIGN DATA
METALLIZATION:
Top: (Anode) ....................Al
Back: (Cathode)..............Au
AL THICKNESS
............25,000 Å Min
GOLD THICKNESS
........4,000 Å Min
NOTE 1
AT 100mA (pulsed) except for CD645
which is at 400mA (pulsed)
CHIP THICKNESS
..................10 Mils
TOLERANCES:
ALL
Dimensions ± 2 mils
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
12 MILS
VRM
VRWM
IO
IO
TA=+150
°
C
IFSM
tp = 1/120 S
TA=25
°
C
CD483B, CD485B, CD486B, CD645, CD5194
1000
thru
CD5196
100
IF - Forward Current - (mA)
10
15
0ºC
100
ºC
25º
C
1
0.1
.3
.4
.5
.6
.7
.8
.9
1.0
VF - Forward Voltage (V)
FIGURE 2
Typical Forward Current
vs Forward Voltage
1.1
1.2
1.3
1000
100
IR - Reverse Current - (µA)
10
1
150ºC
0.1
C
100º
25ºC
.01
-65ºC
-65ºC
NOTE :
.001
20 40 60 80 100 120 140
Percent of Reverse Working Voltage (%)
FIGURE 3
Typical Reverse Current
vs Reverse Voltage
All temperatures shown on graphs are
junction temperatures
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