Silicon Controlled Rectifier, 315A I(T)RMS, 315000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, CASE T62, 3 PIN
| Parameter Name | Attribute value |
| Objectid | 1874763008 |
| package instruction | DISK BUTTON, O-XXDB-X3 |
| Contacts | 3 |
| Manufacturer packaging code | CASE T62 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| YTEOL | 6.2 |
| Configuration | SINGLE |
| Critical rise rate of minimum off-state voltage | 300 V/us |
| Maximum DC gate trigger current | 150 mA |
| Maximum DC gate trigger voltage | 3 V |
| JESD-30 code | O-XXDB-X3 |
| Maximum leakage current | 25 mA |
| On-state non-repetitive peak current | 4000 A |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum on-state current | 315000 A |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -40 °C |
| Package body material | UNSPECIFIED |
| Package shape | ROUND |
| Package form | DISK BUTTON |
| Certification status | Not Qualified |
| Maximum rms on-state current | 315 A |
| Off-state repetitive peak voltage | 600 V |
| Repeated peak reverse voltage | 600 V |
| surface mount | YES |
| Terminal surface | NICKEL |
| Terminal form | UNSPECIFIED |
| Terminal location | UNSPECIFIED |
| Trigger device type | SCR |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD