V73CBG04408RALJK13H datasheet, PDF

V73CBG04408RALJK13H: DescriptionDDR DRAM, 1GX4, 0.195ns, CMOS, PBGA78,; Categorystorage storage; File Size2MB，62 Pages; ManufacturerProMOS Technologies Inc; Environmental Compliance

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V73CBG04408RALJK13H Overview

DDR DRAM, 1GX4, 0.195ns, CMOS, PBGA78,

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	8309607814
package instruction	FBGA, BGA78,9X13,32
Reach Compliance Code	compliant
Country Of Origin	Mainland China
ECCN code	EAR99
YTEOL	2
Maximum access time	0.195 ns
Maximum clock frequency (fCLK)	933 MHz
I/O type	COMMON
interleaved burst length	8
JESD-30 code	R-PBGA-B78
memory density	4294967296 bit
Memory IC Type	DDR3L DRAM
memory width	4
Number of terminals	78
word count	1073741824 words
character code	1000000000
Maximum operating temperature	105 °C
Minimum operating temperature	-40 °C
organize	1GX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA78,9X13,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
power supply	1.35 V
Certification status	Not Qualified
refresh cycle	8192
Continuous burst length	8
Nominal supply voltage (Vsup)	1.35 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM

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