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BCR 135L3 E6327

Description
trans prebias npn 250mw tslp-3
Categorysemiconductor    Discrete semiconductor   
File Size864KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BCR 135L3 E6327 Overview

trans prebias npn 250mw tslp-3

BCR 135L3 E6327 Parametric

Parameter NameAttribute value
Datasheets
BCR135 Series (2005)
Product Photos
TSLP-3-1
Standard Package15,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
PackagingTape & Reel (TR)
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)10k
Resistor - Emitter Base (R2) (Ohms)47k
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transiti150MHz
Power - Max250mW
Mounting TypeSurface Mou
Package / CaseSC-101, SOT-883
Supplier Device PackagePG-TSLP-3
Other NamesBCR135L3E6327XTSP000014856
BCR135...
NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit
driver circuit
Built in bias resistor (R
1
=10 kΩ,
R
2
=47 kΩ)
BCR135S: Two internally isolated
transistors with good matching
in one multichip package
BCR135S: For orientation in reel see
package information below
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BCR135
BCR135W
C
3
BCR135S
C1
6
B2
5
E2
4
R
1
R
1
R
2
TR2
R
1
R
2
TR1
R
2
1
B
2
E
EHA07184
1
E1
2
B1
3
C2
EHA07174
Type
BCR135
BCR135S
BCR135W
Marking
WJs
WJs
WJs
1=B
1=B
Pin Configuration
2=E
2=E
3=C
3=C
-
-
-
-
-
-
Package
SOT23
SOT323
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1
2011-08-19

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