K6T0808V1D, K6T0808U1D Family
Document Title
32Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0
1.0
History
Initial draft
Finalize
- Add 70ns part in KM62U256D Family
- Show I
CC
read only, and increased value
I
CC
= 2mA
→I
CC
Read = 5mA
- Seperate I
CC1
read and write
I
CC1
= 5mA→I
CC1
Read = 5mA, I
CC1
Write = 10mA
- Improved standby current(I
SB1
)
Commercial part : 10µA→5µA
Extended and Industrial part : 20µA→5µA
- Improved V
IL
(Min.) : 0.4V→0.6V
- Improved power dissipation : 0.7W→1W
Draft Data
April 1, 1997
November 12, 1997
Remark
Preliminary
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO, LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
November 1997
K6T0808V1D, K6T0808U1D Family
32Kx8 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
• Process Technology: 0.4µm CMOS
• Organization: 32Kx8
• Power Supply Voltage
K6T0808V1D family: 3.0~3.6V
K6T0808U1D family: 2.7~3.3V
• Low Data Retention Voltage: 2V(Min)
• Three state output and TTL Compatible
• Package Type: 28-SOP-450, 28-TSOP1-0813.4F/R
CMOS SRAM
GENERAL DESCRIPTION
The K6T0808V1D and K6T0808U1D families are fabricated
by SAMSUNG's advanced CMOS process technology. The
families support various operating temperature range and
have various package types for user flexibility of system
design. The families also support low data retention voltage
for battery back-up operation with low data retention current.
PRODUCT FAMILY
Product Family
Operating Tempera-
ture
Power Dissipation
V
CC
Range
Speed
Standby
(I
SB1
, Max)
Operating
(Icc
2
, Max)
PKG Type
K6T0808V1D-B
K6T0808U1D-B
K6T0808V1D-D
K6T0808U1D-D
K6T0808V1D-F
K6T0808U1D-F
Commercial(0~70°C)
3.0V ~3.6V
2.7V ~ 3.3V
70
1)
/100ns
70
1)
/85/100ns
70
1)
/100ns
70
1)
/85/100ns
70
1)
/100ns
70
1)
/85/100ns
5µA
35mA
28-SOP
2)
28-TSOP1-F/R
Extended(-25~85°C)
3.0V ~3.6V
2.7V ~ 3.3V
Industrial(-40~85°C)
3.0V ~3.6V
2.7V ~ 3.3V
1. The parameter is measured with 30pF test load.
2. K6T0808V1D Family support SOP package without 100ns speed bin.
PIN DESCRIPTION
OE
A11
A9
A8
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
VCC A13
VCC
A13 A14
A8
A9
A11
OE
A10
CS
I/O8
A3
A4
A5
A6
14
13
12
11
10
9
8
7
6
5
4
3
2
1
15
16
17
18
19
20
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
FUNCTIONAL BLOCK DIAGRAM
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
Clk gen.
A13
A8
A12
A14
A4
A5
A6
A7
Precharge circuit.
WE
WE
28-TSOP
Type1 - Forward
23
22
21
20
19
18
17
16
15
A12
A7
A6
A5
A4
A3
Row
select
Memory array
256 rows
128×8 columns
28-SOP
21
20
19
18
17
16
15
A2
A1
A0
I/O1
I/O2
I/O3
VSS
I/O4
I/O5
I/O6
I/O7
I/O8
CS
A10
CS
A10 A3
I/O
1
I/O
8
Data
cont
I/O Circuit
Column select
A7
I/O7 A12
A14
I/O6 VCC
WE
I/O5
A13
A8
I/O4
A9
A11
OE
28-TSOP
Type1 - Reverse
21
22
23
24
25
26
27
28
Data
cont
A0
A1
A2 A9
A11
Pin Name
A
0
~A
14
WE
CS
OE
Function
Address Inputs
Write Enable Input
Chip Select Input
Output Enable Input
Pin Name
I/O
1
~I/O
8
Vcc
Vss
NC
Function
WE
Control
logic
Data Inputs/Outputs
OE
Power
Ground
No connect
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
2
Revision 1.0
November 1997
K6T0808V1D, K6T0808U1D Family
PRODUCT LIST
Commercial Temp. Product
(0~70°C)
Part Name
K6T0808V1D-GB70
K6T0808V1D-TB70
K6T0808V1D-TB10
K6T0808V1D-RB70
K6T0808V1D-RB10
K6T0808U1D-GB70
K6T0808U1D-GB85
K6T0808U1D-GB10
K6T0808U1D-TB70
K6T0808U1D-TB85
K6T0808U1D-TB10
K6T0808U1D-RB70
K6T0808U1D-RB85
K6T0808U1D-RB10
CMOS SRAM
Industrial Temp Products
(-40~85°C)
Part Name
K6T0808V1D-GF70
K6T0808V1D-TF70
K6T0808V1D-RF70
Extended Temp. Products
(-25~85°C)
Part Name
K6T0808V1D-GD70
K6T0808V1D-TD70
K6T0808V1D-RD70
Function
28-SOP, 70ns, 3.3V
28-TSOP F, 70ns, 3.3V
28-TSOP R, 70ns, 3.3V
Function
28-SOP, 70ns, 3.3V
28-TSOP F, 70ns, 3.3V
28-TSOP R, 70ns, 3.3V
Function
28-SOP, 70ns, 3.3V
28-TSOP F, 70ns, 3.3V
28-TSOP F, 100ns, 3.3V
28-TSOP R, 70ns, 3.3V
28-TSOP R, 100ns, 3.3V
28-SOP, 70ns, 3.0V
28-SOP, 85ns, 3.0V
28-SOP, 100ns, 3.0V
28-TSOP F, 70ns, 3.0V
28-TSOP F, 85ns, 3.0V
28-TSOP F, 100ns, 3.0V
28-TSOP R, 70ns, 3.0V
28-TSOP R, 85ns, 3.0V
28-TSOP R, 100ns, 3.0V
28-TSOP F, 100ns, 3.3V K6T0808V1D-TD10
28-TSOP R, 100ns, 3.3V K6T0808V1D-RD10
28-SOP, 70ns, 3.0V
28-SOP, 85ns, 3.0V
28-SOP, 100ns, 3.0V
28-TSOP F, 70ns, 3.0V
28-TSOP F, 85ns, 3.0V
28-TSOP R, 70ns, 3.0V
K6T0808U1D-GD70
K6T0808U1D-GD85
K6T0808U1D-GD10
K6T0808U1D-TD70
K6T0808U1D-TD85
K6T0808U1D-RD70
28-TSOP F, 100ns, 3.3V K6T0808V1D-TF10
28-TSOP R, 100ns, 3.3V K6T0808V1D-RF10
28-SOP, 70ns, 3.0V
28-SOP, 85ns, 3.0V
28-SOP, 100ns, 3.0V
28-TSOP F, 70ns, 3.0V
28-TSOP F, 85ns, 3.0V
28-TSOP R, 70ns, 3.0V
28-TSOP R, 85ns, 3.0V
K6T0808U1D-GF70
K6T0808U1D-GF85
K6T0808U1D-GF10
K6T0808U1D-TF70
K6T0808U1D-TF85
K6T0808U1D-RF70
K6T0808U1D-RF85
28-TSOP F, 100ns, 3.0V K6T0808U1D-TD10
28-TSOP R, 85ns, 3.0V K6T0808U1D-RD85
28-TSOP R, 100ns, 3.0V K6T0808U1D-RD10
28-TSOP F, 100ns, 3.0V K6T0808U1D-TF10
28-TSOP R, 100ns, 3.0V K6T0808U1D-RF10
FUNCTIONAL DESCRIPTION
CS
H
L
L
L
OE
X
1)
H
L
X
1)
WE
X
1)
H
H
L
I/O
High-Z
High-Z
Dout
Din
Mode
Deselected
Output Disabled
Read
Write
Power
Standby
Active
Active
Active
1. X means don't care (Must be in high or low states)
ABSOLUTE MAXIMUM RATINGS
1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
Symbol
V
IN
,V
OUT
V
CC
P
D
T
STG
T
A
Ratings
-0.5 to V
CC
+0.5
-0.5 to 4.6
1.0
-65 to 150
0 to 70
-25 to 85
-40 to 85
Soldering temperature and time
T
SOLDER
260°C, 10sec (Lead Only)
Unit
V
V
W
°C
°C
°C
°C
-
Remark
-
-
-
-
K6T0808V1D-L, K6T0808U1D-L
K6T0808V1D-N, K6T0808U1D-N
K6T0808V1D-P, K6T0808U1D-P
-
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
3
Revision 1.0
November 1997
K6T0808V1D, K6T0808U1D Family
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
Vcc
Vss
V
IH
V
IL
Product
K6T0808V1D Family
K6T0808U1D Family
ALL
K6T0808V1D, K6T0808U1D Family
K6T0808V1D, K6T0808U1D Family
Min
3.0
2.7
0
2.2
-0.3
3)
Typ
3.3
3.0
0
-
-
CMOS SRAM
Max
3.6
3.3
0
Vcc+0.3
0.6
V
V
V
Unit
V
Note:
1. Commercial Product : T
A
=0 to 70°C, otherwise specified
Industrial Product : T
A
=-40 to 85°C, otherwise specified
2. Overshoot : V
CC
+3.0V in case of pulse width
≤
30ns
3. Undershoot : -3.0V in case of pulse width
≤
30ns
4. Overshoot and undershoot are sampled, not 100% tested
CAPACITANCE
1)
(f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Symbol
I
LI
I
LO
I
CC
I
CC1
I
CC2
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current (CMOS)
V
OL
V
OH
I
SB
I
SB1
V
IN
=Vss to Vcc
CS=V
IH
or OE=V
IH
or WE=V
IL
, V
IO
=V
SS
to Vcc
I
IO
=0mA, CS=V
IL,
V
IN
=V
IH
or V
IL
, Read
Cycle time=1µs, 100% duty, I
IO
=0mA
CS≤0.2V, V
IN
≤0.2V,
V
IN
≥Vcc
-0.2V
Read
Write
-
-
2.4
-
-
Test Conditions
Min
-1
-1
-
-
Typ
-
-
2
1.5
6
23
-
-
-
0.1
Max
1
1
5
5
10
35
0.4
-
0.3
5
mA
V
V
mA
µA
Unit
µA
µA
mA
mA
Cycle time=Min,100% duty, I
IO
=0mA, CS=V
IL,
V
IN
=V
IH
or V
IL
I
OL
=2.1mA
I
OH
=-1.0mA
CS=V
IH
, Other inputs=V
IH
or V
IL
CS≥Vcc-0.2V, Other inputs=0~Vcc
4
Revision 1.0
November 1997
K6T0808V1D, K6T0808U1D Family
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Test Input/Output Reference)
Input pulse level : 0.4 to 2.4V
Input rising and falling time : 5ns
Input and output reference voltage : 1.5V
Output load (See right) :C
L
=100pF+1TTL
C
L
1)
=30pF+1TTL
1. Refer to AC CHARACTERISTICS
CMOS SRAM
C
L
1)
1. Including scope and jig capacitance
AC CHARACTERISTICS
(K6T0808V1D Family : Vcc=3.0~3.6V,
, K6T0808U1D Family : Vcc=2.7~3.3V
Commercial product :T
A
=0 to 70°C, Extended product :T
A
=-25 to 85°C, Industrial product : T
A
=-40 to 85°C)
Speed Bins
Parameter List
Symbol
70
1)
ns
Min
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Read
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
Output disable to high-Z output
Output hold from address
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write
Write pulse width
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
1. The parameter is measured with 30pF test load
85ns
Min
85
-
-
-
10
5
0
0
10
85
70
0
70
60
0
0
35
0
10
Max
-
85
85
40
-
-
30
30
-
-
-
-
-
-
-
25
-
-
-
Min
100
-
-
-
10
5
0
0
15
100
80
0
80
70
0
0
40
0
10
100ns
Max
-
100
100
50
-
-
35
35
-
-
-
-
-
-
-
35
-
-
-
Units
Max
-
70
70
35
-
-
30
30
-
-
-
-
-
-
-
25
-
-
-
t
RC
t
AA
t
CO
t
OE
t
LZ
t
OLZ
t
HZ
t
OHZ
t
OH
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
70
-
-
-
10
5
0
0
5
70
60
0
60
50
0
0
30
0
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DATA RETENTION CHARACTERISTICS
Item
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Symbol
V
DR
I
DR
t
SDR
t
RDR
Test Condition
CS≥Vcc-0.2V
Vcc=3.0V, CS≥Vcc-0.2V
See data retention waveform
Min
2.0
-
0
5
-
-
Typ
-
Max
3.6
5
-
-
Unit
V
µA
ms
5
Revision 1.0
November 1997
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